Stacked ferroelectric planar capacitors in a memory bit-cell

ABSTRACT

A high-density low voltage ferroelectric (or paraelectric) memory bit-cell that includes a planar ferroelectric or paraelectric capacitor. The memory bit-cell comprises 1T1C configuration, where a plate-line is parallel to a word-line, or the plate-line is parallel to a bit-line. The memory bit-cell can be 1TnC, where ‘n’ is a number. In a 1TnC bit-cell, the capacitors are vertically stacked allowing for multiple values to be stored in a single bit-cell. The memory bit-cell can be multi-element FE gain bit-cell. In a multi-element FE gain bit-cell, data sensing is done with signal amplified by a gain transistor in the bit-cell. As such, higher storage density is realized using multi-element FE gain bit-cells. In some examples, the 1T1C, 1TnC, and multi-element FE gain bit-cells are multi-level bit-cells. To realize multi-level bit-cells, the capacitor is placed in a partially switched polarization state by applying different voltage levels or different time pulse widths at the same voltage level.

CLAIM OF PRIORITY

This application is a continuation of, and claims the benefit ofpriority to U.S. patent application Ser. No. 17/339,850, filed on Jun.4, 2021, titled “HIGH-DENSITY Low VOLTAGE FERROELECTRIC MEMORYBIT-CELL,” and which is incorporated by reference in entirety.

BACKGROUND

The standard memory used in processors is static random-access memory(SRAM) or dynamic random-access memory (DRAM), and their derivatives.These memories are volatile memories. For example, when power to thememories is turned off, the memories lose their stored data.Non-volatile memories are now also commonly used in computing platformsto replace magnetic hard disks. Non-volatile memories retain theirstored data for prolonged periods (e.g., months, years, or forever) evenwhen power to those memories is turned off. Examples of non-volatilememories are magnetic random-access memory (MRAM), NAND, or NOR flashmemories. These memories may not be suitable for low power and compactcomputing devices because these memories suffer from high write energy,low density, and high-power consumption.

The background description provided here is for the purpose of generallypresenting the context of the disclosure. Unless otherwise indicatedhere, the material described in this section is not prior art to theclaims in this application and are not admitted to be prior art byinclusion in this section.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the disclosure will be understood more fully from thedetailed description given below and from the accompanying drawings ofvarious embodiments of the disclosure, which, however, should not betaken to limit the disclosure to the specific embodiments, but are forexplanation and understanding only.

FIG. 1A illustrates an apparatus comprising memory and correspondinglogic, wherein the memory comprises ferroelectric (FE) memory bit-cells,in accordance with some embodiments.

FIG. 1B illustrates a timing diagram for writing a logic 1 and logic 0to the FE memory bit-cell, in accordance with some embodiments.

FIG. 2A illustrates a three-dimensional (3D) view of an FE memorybit-cell comprising a planar transistor and a planar FE capacitor, inaccordance with some embodiments.

FIG. 2B illustrates a cross-sectional view of the FE memory bit-cell ofFIG. 2A, in accordance with some embodiments.

FIG. 2C illustrates a 3D view of an FE memory bit-cell comprising aplanar transistor and a planar FE capacitor with wrapped encapsulation,in accordance with some embodiments.

FIG. 2D illustrates a 3D view of an FE memory bit-cell comprising aplanar transistor and a planar FE capacitor with wrapped encapsulation,in accordance with some embodiments.

FIG. 3A illustrates a 3D view of an FE memory bit-cell comprising anon-planar transistor and a planar FE capacitor, in accordance with someembodiments.

FIG. 3B illustrates a 3D view of an FE memory bit-cell comprising anon-planar transistor and a planar FE capacitor, with wrappedencapsulation, in accordance with some embodiments.

FIG. 3C illustrates a 3D view of an FE memory bit-cell comprising anon-planar transistor and a planar FE capacitor, with wrappedencapsulation, in accordance with some embodiments.

FIG. 4 illustrates a planar FE capacitor, in accordance with someembodiments.

FIG. 5 illustrates a pillar FE capacitor including cross-sectional viewsand a 3D view, in accordance with some embodiments.

FIG. 6 illustrates a 3D view of an FE memory bit-cell comprising aplanar transistor and a pillar FE capacitor, where plate-line isparallel to word-line, in accordance with some embodiments.

FIG. 7 illustrates a 3D view of an FE memory bit-cell comprising anon-planar transistor and a pillar FE capacitor, where plate-line isparallel to word-line, in accordance with some embodiments.

FIG. 8 illustrates a bit-cell comprising one transistor and ‘n’ FEcapacitors (1TnC), in accordance with some embodiments.

FIG. 9 illustrates a timing diagram showing read and write operations ofthe bit-cell of FIG. 8 , in accordance with some embodiments.

FIG. 10 illustrates a memory array with 1TnC bit-cells, in accordancewith some embodiments.

FIGS. 11A-H illustrate cross-sections of 1TnC bit-cells showingformation of the 1TnC bit-cells, where the FE capacitors are planarcapacitors on respective pedestals, in accordance with some embodiments.

FIG. 11I illustrates a cross-section of 1TnC bit-cells where the FEcapacitors are planar capacitors on respective metal layers, inaccordance with some embodiments.

FIG. 11J illustrates cross-section of 1TnC bit-cells where the FEcapacitors are planar capacitors on respective metal layers through viasor pedestals, in accordance with some embodiments.

FIG. 12 illustrates a tower of pillar capacitors with shared bit-line orstorage nodes, and separate plate-lines for each pillar capacitor, inaccordance with some embodiments.

FIG. 13 illustrates a 3D view of a tower of pillar capacitors withshared bit-line or storage node, and separate plate-lines for eachpillar capacitor, in accordance with some embodiments.

FIG. 14 illustrates multiple towers of pillar capacitors, each towerhaving a corresponding shared bit-line or storage node, and where pillarcapacitor of a tower has corresponding plate-line shared with otherpillar capacitors of other towers, in accordance with some embodiments.

FIG. 15 illustrates a cross-section of 1TnC bit-cells where the FEcapacitors are pillar capacitors, in accordance with some embodiments.

FIG. 16 illustrates a cross-section of a plurality of pillar capacitorsof 1TnC bit-cells where plate-line is parallel to bit-line, inaccordance with some embodiments.

FIG. 17 illustrates a cross-section of a plurality of pillar capacitorsof 1TnC bit-cells where plate-line is parallel to word-line, inaccordance with some embodiments.

FIG. 18 illustrates a bit-cell comprising two transistors and ‘n’ FEcapacitors (multi-element FE gain bit-cell), in accordance with someembodiments.

FIG. 19 illustrates a timing diagram showing read and write operationsof the bit-cell of FIG. 18 , in accordance with some embodiments.

FIG. 20 illustrates a cross-section of a plurality of pillar capacitorsof multi-element FE gain bit-cells where plate-line is parallel tobit-line, in accordance with some embodiments.

FIG. 21 illustrates 1TnC FE memory differential bit-cell, in accordancewith some embodiments.

FIG. 22 illustrates multi-element FE gain differential bit-cell, inaccordance with some embodiments.

FIG. 23 illustrates a smart memory chip having FE memory bit-cells andartificial intelligence (AI) processor, in accordance with someembodiments.

DETAILED DESCRIPTION

Various embodiments describe a high-density low voltage ferroelectric(or paraelectric) memory bit-cell. In some embodiments, the memorybit-cell includes a planar ferroelectric or paraelectric capacitor. Insome embodiments, the memory bit-cell includes a pillar ferroelectric orparaelectric capacitor. In some embodiments, the memory bit-cellcomprises one transistor and one capacitor (1T1C), where a plate-line isparallel to a word-line. In some embodiments, the plate-line is parallelto a bit-line. In some embodiments, the memory bit-cell comprises 1TnC,where ‘n’ is a number. In a 1TnC bit-cell, the capacitors are verticallystacked allowing for multiple values to be stored in a single bit-cell.In some embodiments, the memory bit-cell is multi-element FE gainbit-cell. In one such embodiment, data sensing is done with signalamplified by a gain transistor in the bit-cell. Multi-element FE gainbit-cell allows for larger array implementation due to decoupling ofsense charge required from the sense-line capacitance. Owing to largertransistor layer footprint within the multi-element FE gain bit-cell,trade-offs associated with sizing the non-planar capacitor height Vsfilm-thickness can be utilized as well. As such, higher storage densityis realized using multi-element FE gain bit-cells. In some embodiments,the capacitors that share the same node for connectivity can implementfolding and stacking together, realizing different trade-offs on densityand process control requirements. In some embodiments, the 1T1C, 1TnC,and multi-element FE gain bit-cells are multi-level bit-cells. Torealize multi-level bit-cells, the ferroelectric (or paraelectric)capacitor is placed in a partially switched polarization state. Partialpolarization state can be achieved by applying either different voltagelevels to the capacitor, or different time pulse widths at the samevoltage level. By using stacked capacitor in combination of multi-levelprogramming of the bit-cells, higher storage density per bit-cell can beachieved, in accordance with various embodiments. Other technicaleffects will be evident from the various embodiments and figures.

In the following description, numerous details are discussed to providea more thorough explanation of embodiments of the present disclosure. Itwill be apparent, however, to one skilled in the art, that embodimentsof the present disclosure may be practiced without these specificdetails. In other instances, well-known structures and devices are shownin block diagram form, rather than in detail, in order to avoidobscuring embodiments of the present disclosure.

Note that in the corresponding drawings of the embodiments, signals arerepresented with lines. Some lines may be thicker, to indicate moreconstituent signal paths, and/or have arrows at one or more ends, toindicate primary information flow direction. Such indications are notintended to be limiting. Rather, the lines are used in connection withone or more exemplary embodiments to facilitate easier understanding ofa circuit or a logical unit. Any represented signal, as dictated bydesign needs or preferences, may actually comprise one or more signalsthat may travel in either direction and may be implemented with anysuitable type of signal scheme.

The term “device” may generally refer to an apparatus according to thecontext of the usage of that term. For example, a device may refer to astack of layers or structures, a single structure or layer, a connectionof various structures having active and/or passive elements, etc.Generally, a device is a three-dimensional structure with a plane alongthe x-y direction and a height along the z direction of an x-y-zCartesian coordinate system. The plane of the device may also be theplane of an apparatus which comprises the device.

Throughout the specification, and in the claims, the term “connected”means a direct connection, such as electrical, mechanical, or magneticconnection between the things that are connected, without anyintermediary devices.

The term “coupled” means a direct or indirect connection, such as adirect electrical, mechanical, or magnetic connection between the thingsthat are connected or an indirect connection, through one or morepassive or active intermediary devices.

The term “adjacent” here generally refers to a position of a thing beingnext to (e.g., immediately next to or close to with one or more thingsbetween them) or adjoining another thing (e.g., abutting it).

The term “circuit” or “module” may refer to one or more passive and/oractive components that are arranged to cooperate with one another toprovide a desired function.

The term “signal” may refer to at least one current signal, voltagesignal, magnetic signal, or data/clock signal. The meaning of “a,” “an,”and “the” include plural references. The meaning of “in” includes “in”and “on.”

The term “scaling” generally refers to converting a design (schematicand layout) from one process technology to another process technologyand subsequently being reduced in layout area. The term “scaling”generally also refers to downsizing layout and devices within the sametechnology node. The term “scaling” may also refer to adjusting (e.g.,slowing down or speeding up—i.e. scaling down, or scaling uprespectively) of a signal frequency relative to another parameter, forexample, power supply level.

The terms “substantially,” “close,” “approximately,” “near,” and“about,” generally refer to being within +/−10% of a target value. Forexample, unless otherwise specified in the explicit context of theiruse, the terms “substantially equal,” “about equal” and “approximatelyequal” mean that there is no more than incidental variation betweenamong things so described. In the art, such variation is typically nomore than +/−10% of a predetermined target value.

Unless otherwise specified the use of the ordinal adjectives “first,”“second,” and “third,” etc., to describe a common object, merelyindicate that different instances of like objects are being referred to,and are not intended to imply that the objects so described must be in agiven sequence, either temporally, spatially, in ranking or in any othermanner.

For the purposes of the present disclosure, phrases “A and/or B” and “Aor B” mean (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

The terms “left,” “right,” “front,” “back,” “top,” “bottom,” “over,”“under,” and the like in the description and in the claims, if any, areused for descriptive purposes and not necessarily for describingpermanent relative positions. For example, the terms “over,” “under,”“front side,” “back side,” “top,” “bottom,” “over,” “under,” and “on” asused herein refer to a relative position of one component, structure, ormaterial with respect to other referenced components, structures ormaterials within a device, where such physical relationships arenoteworthy. These terms are employed herein for descriptive purposesonly and predominantly within the context of a device z-axis andtherefore may be relative to an orientation of a device. Hence, a firstmaterial “over” a second material in the context of a figure providedherein may also be “under” the second material if the device is orientedupside-down relative to the context of the figure provided. In thecontext of materials, one material disposed over or under another may bedirectly in contact or may have one or more intervening materials.Moreover, one material disposed between two materials may be directly incontact with the two layers or may have one or more intervening layers.In contrast, a first material “on” a second material is in directcontact with that second material. Similar distinctions are to be madein the context of component assemblies.

The term “between” may be employed in the context of the z-axis, x-axisor y-axis of a device. A material that is between two other materialsmay be in contact with one or both of those materials, or it may beseparated from both of the other two materials by one or moreintervening materials. A material “between” two other materials maytherefore be in contact with either of the other two materials, or itmay be coupled to the other two materials through an interveningmaterial. A device that is between two other devices may be directlyconnected to one or both of those devices, or it may be separated fromboth of the other two devices by one or more intervening devices.

Here, multiple non-silicon semiconductor material layers may be stackedwithin a single fin structure. The multiple non-silicon semiconductormaterial layers may include one or more “P-type” layers that aresuitable (e.g., offer higher hole mobility than silicon) for P-typetransistors. The multiple non-silicon semiconductor material layers mayfurther include one or more “N-type” layers that are suitable (e.g.,offer higher electron mobility than silicon) for N-type transistors. Themultiple non-silicon semiconductor material layers may further includeone or more intervening layers separating the N-type from the P-typelayers. The intervening layers may be at least partially sacrificial,for example to allow one or more of a gate, a source, or a drain to wrapcompletely around a channel region of one or more of the N-type andP-type transistors. The multiple non-silicon semiconductor materiallayers may be fabricated, at least in part, with self-aligned techniquessuch that a stacked CMOS device may include both a high-mobility N-typeand P-type transistor with a footprint of a single FET (field effecttransistor).

Here, the term “backend” generally refers to a section of a die which isopposite of a “frontend” and where an IC (integrated circuit) packagecouples to IC die bumps. For example, high-level metal layers (e.g.,metal layer 6 and above in a ten-metal stack die) and corresponding viasthat are closer to a die package are considered part of the backend ofthe die. Conversely, the term “frontend” generally refers to a sectionof the die that includes the active region (e.g., where transistors arefabricated) and low-level metal layers and corresponding vias that arecloser to the active region (e.g., metal layer 5 and below in theten-metal stack die example).

It is pointed out that those elements of the figures having the samereference numbers (or names) as the elements of any other figure canoperate or function in any manner similar to that described, but are notlimited to such.

FIG. 1A illustrates apparatus 100 comprising memory and correspondinglogic, wherein the memory comprises ferroelectric (FE) memory bit-cells,in accordance with some embodiments. Apparatus 100 comprises M×N memoryarray 101 of bit-cells, logic circuitry 102 for address decoding, logiccircuitry 103 for sense amplifier and write drivers, and plate-line (PL)driver 104. Logic circuitry 102 comprises address decoders for selectinga row of bit-cells and/or a particular bit-cell from M×N memory array101, where M and N are integers of same or different values. Logiccircuitry 103 comprises sense-amplifiers for reading the values from theselected bit-cell, while write drivers are used to write a particularvalue to a selected bit-cell. Here, a schematic of FE bit-cell 101_(0,0) is illustrated. The same embodiments apply to other bit-cells ofthe M×N array. In this example, a one-transistor one-capacitor (1T1C)bit cell is shown, but the embodiments are applicable to 1TnC bit-celland multi-element FE gain bit-cell as described herein.

In some embodiments, bit-cell 101 _(0,0) comprises a word-line (WL), aplate-line (PL), a bit-line (BL), and bit-cell 101 _(0,0). In someembodiments, bit-cell 101 _(0,0) comprises an n-type transistor MN₁, andFE capacitive structure Cfe₁. The gates of transistor MN₁ are coupled toa common WL. In various embodiments, one terminal of the FE capacitivestructure Cfe₁ is coupled to a PL. The second terminal of the FEcapacitive structure is coupled to source or drain terminal of thetransistor MN₁. In various embodiments, BL is coupled to the source ordrain terminal of first transistor MN₁. In some embodiments, a BLcapacitor CBl₁ is coupled to the source or drain terminal of firsttransistor MN₁ and to a reference node (e.g., ground such that the FEcapacitor is not coupled to the same source or drain terminal. In someembodiments, the PL is parallel to the BL and orthogonal to the WL. Insome embodiments, the PL is parallel to the WL and orthogonal to the BL.

In some embodiments, the FE capacitor is a planar capacitor. In someembodiments, the FE capacitor is a pillar or non-planar capacitor. Insome embodiments, when the bit-cell is a 1TnC bit-cell, the FEcapacitors are configured in a tower structure allowing the x-yfoot-print to remain the same as for a 1T1C bit-cell but with tallerbit-cell in the z-direction. In some embodiments, when the bit-cell is amulti-element FE gain bit-cell, the bit-cell allows for decoupling ofthe storage node from BL, allows for reducing the thickness scalingrequirement for pillar capacitors, and allows for reducing polarizationdensity requirements. Further, by stacking the ‘n’ capacitors in thez-direction (forming a tower), the area increases in the x-y directiondue to the two transistors. The increase in area (due to the twotransistors per bit-cell) allows for expanding the sizes (or radius) ofthe capacitors in the x-y direction.

FIG. 1B illustrates timing diagram 120 for writing a logic 1 and logic 0to the FE memory bit-cell, in accordance with some embodiments. To writedata to bit-cell 101 _(0,0), BL and PL generate a signal sequence. Insome embodiments, the signal scheme for sensing the data follows a writeoperation (can be to a 1 or 0 pre-determined by configuration), whichhelps create a signature on the bit-line for “opposite” or “same” staterelative to the write operation. This signature is sensed by asense-amplifier, that compares the signature relative to either areference value, or in case of differential implementation the sign ofvoltage difference between differential bit-lines. The reads aredestructive reads similar to DRAM, and the information depending onsystem protocol may or may not be required to be written back to thememory cell with a write-back phase. While the various embodiments areillustrated using n-type transistors, the bit-cell can also beimplemented using p-type transistors.

FIG. 2A illustrates a three-dimensional (3D) view 200 of an FE memorybit-cell comprising a planar transistor and a planar FE capacitor, inaccordance with some embodiments. The memory bit-cell includes a planartransistor MN having substrate 201, source region 202, drain region 203,channel region 204, gate comprising gate dielectric 205, gate spacers206 a and 206 b; gate metal 207, source contact 208 a, and drain contact208 b.

Substrate 201 includes a suitable semiconductor material such as: singlecrystal silicon, polycrystalline silicon and silicon on insulator (SOI).In one embodiment, substrate 201 includes other semiconductor materialssuch as: Si, Ge, SiGe, or a suitable group III-V or group III-Ncompound. Substrate 201 may also include semiconductor materials,metals, dopants, and other materials commonly found in semiconductorsubstrates.

In some embodiments, source region 202 and drain region 203 are formedwithin substrate 201 adjacent to the gate stack of the transistor.Source region 202 and drain region 203 are generally formed using eitheran etching/deposition process or an implantation/diffusion process.

In the etching and deposition process, substrate 201 may first be etchedto form recesses at the locations of source region 202 and drain region203. An epitaxial deposition process may then be carried out to fill therecesses with material that is used to fabricate the source region 202and drain region 203. In the implantation/diffusion process, dopantssuch as boron, aluminum, antimony, phosphorous, or arsenic may beion-implanted into the substrate to form the source region 202 and drainregion 203. An annealing process that activates the dopants and causesthem to diffuse further into substrate 201 typically follows theion-implantation process.

In some embodiments, one or more layers of metal and/or metal alloys areused to form the source region 202 and drain region 203. In someembodiments, source region 202 and drain region 203 are formed using oneor more alternate semiconductor materials such as germanium or asuitable group III-V compound. In some embodiments, source region 202and drain region 203 are fabricated using a silicon alloy such assilicon germanium or silicon carbide. In some embodiments, theepitaxially deposited silicon alloy is doped in-situ with dopants suchas boron, arsenic, or phosphorous.

The semiconductor material for channel region 204 may have the samematerial as substrate 201, in accordance with some embodiments. In someembodiments, channel region 204 includes one of: Si, SiGe, Ge, and GaAs.

Gate dielectric 205 may include one layer or a stack of layers. The oneor more layers may include high-k dielectric material, silicon oxide,and/or silicon dioxide (SiO₂). The high-k dielectric material mayinclude elements such as: zinc, niobium, scandium, lean yttrium,hafnium, silicon, strontium, oxygen, barium, titanium, zirconium,tantalum, aluminum, and lanthanum. Examples of high-k materials that maybe used in the gate dielectric layer include: lead zinc niobate, hafniumoxide, lead scandium tantalum oxide, hafnium silicon oxide, yttriumoxide, aluminum oxide, lanthanum oxide, barium strontium titanium oxide,lanthanum aluminum oxide, titanium oxide, zirconium oxide, tantalumoxide, and zirconium silicon oxide. In some embodiments, when a high-kmaterial is used, an annealing process is used on gate dielectric 205 toimprove its quality.

In some embodiments, a pair of spacer layers (sidewall spacers) 206 a/bare formed on opposing sides of the gate stack that bracket the gatestack. The pair of spacer layers 206 a/b are formed from a material suchas: silicon oxy-nitride, silicon nitride, silicon nitride doped withcarbon, or silicon carbide. Processes for forming sidewall spacers arewell-known in the art and generally include deposition and etchingprocess operations. In some embodiments, a plurality of spacer pairs maybe used. For example, two pairs, three pairs, or four pairs of sidewallspacers may be formed on opposing sides of the gate stack.

Gate metal layer 207 may comprise at least one P-type work-functionmetal or N-type work-function metal, depending on whether the transistoris to be a p-type or an n-type transistor. Gate metal layer 207 maycomprise a stack of two or more metal layers, where one or more metallayers are work-function metal layers and at least one metal layer is aconductive fill layer.

For an n-type transistor, metals that may be used for the gate metallayer 207 include: aluminum carbide, tantalum carbide, zirconiumcarbide, and hafnium carbide. In some embodiments, metal for gate metallayer 207 for n-type transistor include: aluminum, hafnium, zirconium,titanium, tantalum, and their alloys. An n-type metal layer will enablethe formation of an n-type gate metal layer 207 with a work functionthat is between about 3.9 eV and about 4.2 eV. In some embodiments,metal of layer 207 includes one of: TiN, TiSiN, TaN, Cu, Al, Au, W,TiSiN, or Co. In some embodiments, metal of layer 107 includes one ormore of: Ti, N, Si, Ta, Cu, Al, Au, W, or Co.

For a p-type transistor, metals that are used for gate metal layer 207include, but are not limited to, ruthenium, palladium, platinum, cobalt,nickel, and conductive metal oxides. An example of conductive oxideincludes ruthenium oxide. A p-type metal layer will enable the formationof a p-type gate metal layer 207 with a work function that is betweenabout 4.9 eV and about 5.2 eV.

The drain contact 208 b is coupled to via 209 a/b, which is coupled tometal layer 110. Metal layer 210 is the bit-line, which extends alongthe x-axis. The source contact 208 a is coupled to via 209 b. Anysuitable material can be used for drain and source contacts 208 a/b andvia 209 a/b. For example, one or more of Ti, N, Si, Ta, Cu, Al, Au, W,or Co can be used for drain and source contacts 208 a/n and via 209 a/b.Via 209 b is coupled to FE capacitor Cfe that comprises refractiveinter-metallic 211 a/b as a barrier material; conductive oxides 212 a/b,and FE material 213.

Refractive inter-metallic 211 a/b maintains the FE properties of the FEcapacitor Cfe. In the absence of refractive inter-metallic 211 a/b, theferroelectric material or the paraelectric material 213 of the capacitormay lose its potency. In some embodiments, refractive inter-metallic 211a/b comprises Ti and Al (e.g., TiAl compound). In some embodiments,refractive inter-metallic 211 a/b comprises one or more of Ta, W, and/orCo.

For example, refractive inter-metallic 211 a/b includes a lattice of Ta,W, and Co. In some embodiments, refractive inter-metallic 211 a/bincludes one of: Ti—Al such as Ti3Al, TiAl, TiAl3; Ni—Al such as Ni3Al,NiAl3, NiAl; Ni—Ti, Ni—Ga, Ni2MnGa; FeGa, Fe3Ga; borides, carbides, ornitrides. In some embodiments, TiAl material comprisesTi-(45-48)Al-(1-10)M at X trace amount %), with M being at least oneelement from: V, Cr, Mn, Nb, Ta, W, and Mo, and with trace amounts of0.1-5% of Si, B, and/or Mg. In some embodiments, TiAl is a single-phasealloy γ(TiAl). In some embodiments, TiAl is a two-phase alloyγ(TiAl)+α2(Ti3Al). Single-phase γ alloys contain third alloying elementssuch as Nb or Ta that promote strengthening and additionally enhanceoxidation resistance. The role of the third alloying elements in thetwo-phase alloys is to raise ductility (V, Cr, Mn), oxidation resistance(Nb, Ta) or combined properties. Additions such as Si, B and Mg canmarkedly enhance other properties. Barrier layer 211 a is coupled toplate-line or power-line (PL) 215. In some embodiments, sidewall barrierseal 221 a/b (insulating material) is placed around layers 211 a, 212 a,213, 212 b, and 211 b along while the top and bottom surfaces of 211 aand 211 b are exposed for coupling to metal layers, vias, or a metallicpedestal.

In various embodiments, PL 215 extends along the x-direction andparallel to the BL 210. By having the BL and the PL parallel to oneanother further improves the density of the memory because the memoryarray footprint is reduced, allowing column multiplexing (muxing), andsharing of sense-amplifier, and PL line driver size reduction, comparedto the case when BL and PL are orthogonal to each other. The gate metal207 is coupled to a gate contact 216, which is coupled to a metal line217. Metal line 217 is used as the word-line (WL). In some embodiments,WL 217 extends orthogonal to BL 110 and PL 115. In some embodiments, WL217 is also parallel to BL 210 and PL 215. Any suitable metal can beused for BL 210, PL 215, and WL 217. For example, Al, Cu, Co, Au, or Agcan be used for BL 210, PL 215, and WL 217.

In various embodiments, FE material 213 can be any suitable low voltageFE material that allows the FE material to switch its state by a lowvoltage (e.g., 100 mV). Threshold in FE material 213 has a highlynon-linear transfer function in the polarization vs. voltage response.The threshold is related a) non-linearity of switching transferfunction, and b) to the squareness of the FE switching. Thenon-linearity of switching transfer function is the width of thederivative of the polarization vs. voltage plot. The squareness isdefined by the ratio of the remnant polarization to the saturationpolarization; perfect squareness will show a value of 1.

The squareness of the FE switching can be suitably manipulated withchemical substitution. For example, in PbTiO3 a P-E(polarization-electric field) square loop can be modified by La or Nbsubstitution to create an S-shaped loop. The shape can be systematicallytuned to ultimately yield a non-linear dielectric. The squareness of theFE switching can also be changed by the granularity of FE material 213.A perfectly epitaxial, single crystalline FE layer will show highersquareness (e.g., ratio is closer to 1) compared to a poly crystallineFE. This perfect epitaxial can be accomplished by the use of latticematched bottom and top electrodes. In one example, BiFeO (BFO) can beepitaxially synthesized using a lattice matched SrRuO3 bottom electrodeyielding P-E loops that are square. Progressive doping with La willreduce the squareness.

In some embodiments, FE material 213 comprises a perovskite of the typeABO₃, where ‘A’ and ‘B’ are two cations of different sizes, and ‘O’ isoxygen which is an anion that bonds to both the cations. Generally, thesize of atoms of A is larger than the size of B atoms. In someembodiments, the perovskite can be doped (e.g., by La or Lanthanides).

In some embodiments, FE material 213 is perovskite, which includes oneor more of: La, Sr, Co, Sr, Ru, Y, Ba, Cu, Bi, Ca, and Ni. For example,metallic perovskites such as: (La,Sr)CoO₃, SrRuO₃, (La,Sr)MnO₃,YBa₂Cu₃O₇, Bi₂Sr₂CaCu₂O₈, LaNiO₃, etc. may be used for FE material 213.Perovskites can be suitably doped to achieve a spontaneous distortion ina range of 0.3 to 2%. For example, for chemically substituted leadtitanate such as Zr in Ti site; La, Nb in Ti site, the concentration ofthese substitutes is such that it achieves the spontaneous distortion inthe range of 0.3-2%. For chemically substituted BiFeO3, BrCrO3, BuCoO3class of materials, La or rate earth substitution into the Bi site cantune the spontaneous distortion. In some embodiments, FE material 213 iscontacted with a conductive metal oxide that includes one of theconducting perovskite metallic oxides exemplified by: La—Sr—CoO3,SrRuO3, La—Sr—MnO3, YBa2Cu3O7, Bi2Sr2CaCu2O8, and LaNiO3.

In some embodiments, FE material 213 comprises a stack of layersincluding low voltage FE material between (or sandwiched between)conductive oxides. In various embodiments, when FE material 213 is aperovskite, the conductive oxides are of the type AA′BB′O₃. A′ is adopant for atomic site A, it can be an element from the Lanthanidesseries. B′ is a dopant for atomic site B, it can be an element from thetransition metal elements especially Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn. A′ may have the same valency of site A, with a differentferroelectric polarizability. In various embodiments, when metallicperovskite is used for FE material 213, conductive oxides 212 a/b caninclude one or more of: IrO₂, RuO₂, PdO₂, OSO₂, or ReO₃. In someembodiments, the perovskite is doped with La or Lanthanides. In someembodiments, thin layer (e.g., approximately 10 nm) perovskite templateconductors such as SrRuO3 coated on top of IrO2, RuO2, PdO2, PtO2, whichhave a non-perovskite structure but higher conductivity to provide aseed or template for the growth of pure perovskite ferroelectric at lowtemperatures, are used as conductive oxides 212 a/b.

In some embodiments, ferroelectric materials are doped with s-orbitalmaterial (e.g., materials for first period, second period, and ionicthird and fourth periods). In some embodiments, f-orbital materials(e.g., lanthanides) are doped to the ferroelectric material to makeparaelectric material. Examples of room temperature paraelectricmaterials include: SrTiO3, Ba(x)Sr(y)TiO3 (where x is −0.05, and y is0.95), HfZrO2, Hf—Si—O, La-substituted PbTiO3, and PMN-PT based relaxorferroelectrics.

In some embodiments, FE material 213 comprises one or more of: Hafnium(Hf), Zirconium (Zr), Aluminum (Al), Silicon (Si), their oxides or theiralloyed oxides. In some embodiments, FE material 213 includes one ormore of: Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N orAl(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca, Ce,Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction. Insome embodiments, FE material 213 includes one or more of: Bismuthferrite (BFO), lead zirconate titanate (PZT), BFO with doping material,or PZT with doping material, wherein the doping material is one of Nb orLa; and relaxor ferroelectrics such as PMN-PT.

In some embodiments, FE material 213 includes Bismuth ferrite (BFO), BFOwith a doping material where in the doping material is one of Lanthanum,or any element from the lanthanide series of the periodic table. In someembodiments, FE material 213 includes lead zirconium titanate (PZT), orPZT with a doping material, wherein the doping material is one of La orNb. In some embodiments, FE material 213 includes a relaxorferro-electric includes one of lead magnesium niobate (PMN), leadmagnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconatetitanate (PLZT), lead scandium niobate (PSN), Barium Titanium-BismuthZinc Niobium Tantalum (BT-BZNT), Barium Titanium-Barium StrontiumTitanium (BT-BST).

In some embodiments, FE material 213 includes Hafnium oxides of theform, Hf1-x Ex Oy where E can be Al, Ca, Ce, Dy, er, Gd, Ge, La, Sc, Si,Sr, Sn, or Y. In some embodiments, FE material 213 includes Niobate typecompounds LiNbO3, LiTaO3, Lithium iron Tantalum Oxy Fluoride, BariumStrontium Niobate, Sodium Barium Niobate, or Potassium strontiumniobate.

In some embodiments, FE material 213 comprises multiple layers. Forexample, alternating layers of [Bi2O2]2+, and pseudo-perovskite blocks(Bi4Ti3O12 and related Aurivillius phases), with perovskite layers thatare n octahedral layers in thickness can be used. In some embodiments,FE material 213 comprises organic material. For example, Polyvinylidenefluoride or polyvinylidene difluoride (PVDF).

In some embodiments, FE material 213 comprises hexagonal ferroelectricsof the type h-RMnO3, where R is a rare earth element viz. cerium (Ce),dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium(Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr),promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium(Tm), ytterbium (Yb), and yttrium (Y). The ferroelectric phase ischaracterized by a buckling of the layered MnO5 polyhedra, accompaniedby displacements of the Y ions, which lead to a net electricpolarization. In some embodiments, hexagonal FE includes one of: YMnO3or LuFeO3. In various embodiments, when FE material 213 compriseshexagonal ferroelectrics, the conductive oxides are of A2O3 (e.g.,In2O3, Fe2O3) and ABO3 type, where ‘A’ is a rare earth element and B isMn.

In some embodiments, FE material 213 comprises improper FE material. Animproper ferroelectric is a ferroelectric where the primary orderparameter is an order mechanism such as strain or buckling of the atomicorder. Examples of improper FE material are LuFeO3 class of materials orsuper lattice of ferroelectric and paraelectric materials PbTiO3 (PTO)and SnTiO3 (STO), respectively, and LaAlO3 (LAO) and STO, respectively.For example, a super lattice of [PTO/STO]n or [LAO/STO]n, where ‘n’ isbetween 1 to 100. While various embodiments here are described withreference to ferroelectric material 213 for storing the charge state,the embodiments are also applicable for paraelectric material. Forexample, the capacitor of various embodiments can be formed usingparaelectric material instead of ferroelectric material.

While various embodiments here are described with reference toferroelectric material for storing the charge state, the embodiments arealso applicable for paraelectric material. For example, material 213 ofvarious embodiments can be formed using paraelectric material instead offerroelectric material. In some embodiments, paraelectric materialincludes one of: SrTiO3, Ba(x)Sr(y)TiO3 (where x is −0.5, and y is0.95), HfZrO2, Hf—Si—O, La-substituted PbTiO3, or PMN-PT based relaxorferroelectrics.

FIG. 2B illustrates a cross-sectional view 220 of two FE memorybit-cells of FIG. 2A, in accordance with some embodiments. Here, firstmemory bit-cell is 101 _(0,0) and second memory bit-cell is 101 _(1,0),each bit-cell is controlled by its respective word-line. First memorybit-cell is 101 _(0,0) is controlled by WL1 while second memory bit-cellis 101 _(1,0) is controlled by WL2. The two bit-cells share diffusionregion and also share BL. In some embodiments sharing of this diffusionregion may not be necessary, however, for denser and improvedperformance sharing diffusion on BL line is preferred in accordance withsome embodiments. Bit-cells along a given row or column receives itsrespective shared PL along the row or column, where the row orcolumn-based sharing is dependent on PL being parallel to WL or PL beingparallel to BL. For example, first memory bit-cell is 101 _(0,0) has afirst FE (pr paraelectric) capacitor coupled to PL1, while second memorybit-cell is 101 _(1,0) has a second FE (or paraelectric capacitor)coupled to PL2. In this example, BL is orthogonal to PL and WL, while PLand WL are parallel. A similar layout can be made where the PL isparallel to the BL. In some embodiments, when PL is parallel to BL,bit-cells that share the same BL, also share the same PL connection. Insome embodiments, while in the case where PL is parallel to the WL,bit-cells that share the same WL connection, also share the same PLconnections.

Here, pitch refers to the x and y dimensions of the bit-cell. Because ofthe small pitch, many bit-cells can be packed in an array fashionleading to a high-density memory array. While the capacitive structureof various embodiments is shown as a rectangular structure, it can haveother shapes too. For example, the capacitive structure of variousembodiments can have a cylindrical shape with dimensions similar to theone described with reference to the rectangular capacitive structure.

FIG. 2C illustrates a 3D view of an FE memory bit-cell 230 comprising aplanar transistor and a planar FE capacitor, with wrapped encapsulation,in accordance with some embodiments. FIG. 2C is similar to FIG. 2A butfor the structure of the planar FE capacitor. In some embodiments, thesidewall barrier seal or encapsulant fully wraps the planar pillarcapacitor except for an opening for via 209 a. For example, in someembodiments, sidewall barrier seals 221 a, 221 b, 221 c, and 221 d(insulating material) is placed around layers 211 a, 212 a, 213, 212 b,and 211 b along while part of top electrode 209 a is exposed forcoupling to metal layer(s), via(s), or a metallic pedestal. Thematerials for sidewall barrier seal 221 includes one of: Ti—Al—O, Al2O3,or MgO. In some embodiments, the material for sidewall barrier seal 221includes one or more of: Ti, Al, O, or Mg.

FIG. 2D illustrates a 3D view of an FE memory bit-cell 240 comprising aplanar transistor and a planar FE capacitor, with wrapped encapsulation,in accordance with some embodiments. FIG. 2D is similar to FIG. 2C butfor the structure of the planar FE capacitor. In some embodiments, thesidewall barrier seal or encapsulant fully wraps the planar pillarcapacitor except for an opening for via 209 a. For example, in someembodiments, sidewall barrier seals 221 a, 221 b, 221 c, 221 d, 221 e,and 221 f (insulating material) is placed around layers 211 a, 212 a,213, 212 b, and 211 b along while part of top electrode 209 a and partof bottom electrode 209 b are exposed for coupling to metal layer(s),via(s), or a metallic pedestal.

FIG. 3A illustrates a 3D view of a FE memory bit-cell 300 comprising anon-planar transistor and a planar FE capacitor, in accordance with someembodiments. The memory bit-cell of FIG. 3A is similar to the memorybit-cell FIG. 2A but for a non-planar transistor. FinFET is an exampleof a non-planar transistor. FinFET comprises a fin that includes sourceregion 302 and drain region 303. A channel resides between the sourceand regions 302 and 303. The transistor MN can have multiple finsparallel to one another that are coupled to the same gate stack. Thefins pass through the gate stack forming source and drain regions 302and 303.

FIG. 3B illustrates a 3D view of an FE memory bit-cell 320 comprising anon-planar transistor and a planar FE capacitor, with wrappedencapsulation, in accordance with some embodiments. FIG. 3B is similarto FIG. 3A but for the structure of the planar FE capacitor. In someembodiments, the sidewall barrier seal or encapsulant fully wraps theplanar pillar capacitor except for an opening for via 209 a. Forexample, in some embodiments, sidewall barrier seals 221 a, 221 b, 221c, and 221 d (insulating material) is placed around layers 211 a, 212 a,213, 212 b, and 211 b along while part of top surface 209 a and/orbottom surface of 209 b are exposed for coupling to metal layers, vias,or a metallic pedestal. The materials for sidewall barrier seal 221includes one of: Ti—Al—O, Al2O3, or MgO. In some embodiments, thematerial for sidewall barrier seal 221 includes one or more of: Ti, Al,O, or Mg.

FIG. 3C illustrates a 3D view of an FE memory bit-cell 320 comprising anon-planar transistor and a planar FE capacitor, with wrappedencapsulation, in accordance with some embodiments. FIG. 3B is similarto FIG. 3A but for the structure of the planar FE capacitor. In someembodiments, the sidewall barrier seal or encapsulant fully wraps theplanar pillar capacitor except for an opening for via 209 a. Forexample, in some embodiments, sidewall barrier seals 221 a, 221 b, 221c, 221 d, 221 e, and 221 f (insulating material) is placed around layers211 a, 212 a, 213, 212 b, and 211 b along while part of top electrode209 a and part of bottom electrode 209 b are exposed for coupling tometal layer(s), via(s), or a metallic pedestal.

FIG. 4 illustrates planar FE capacitor 400, in accordance with someembodiments. Materials for various layers are discussed with referenceto FIG. 2A. In some embodiments, thickness t₁₁₁ of refractiveinter-metallic layer 211 a/b is in a range of 1 nm to 20 nm. In someembodiments, thickness t₁₁₂ of the conductive oxide layers 212 a/b is ina range of 1 nm to 20 nm. In some embodiments, thickness t₁₁₃ of the FEmaterial (e.g., perovskite, hexagonal ferroelectric, or improperferroelectric) 213 a/b is in a range of 1 nm to 20 nm. In someembodiments, the lateral thickness t₁₂₁ of the sidewall barrier seal 221a/b (insulating material) is in a range of 0.1 nm to 40 nm. In someembodiments, the lateral thickness L_(Cfe) of the capacitive structure(without sidewall barrier) is in a range of 5 nm 200 nm. In someembodiments, the height H_(Cfe) of the capacitive structure is in arange of 10 nm 200 nm. In some embodiments, the FE capacitive structureis without refractive inter-metallic layers 211 a/b. In that case,conductive oxides layers 212 a/b are in direct contact with thecontacts, vias, or metals (e.g., PL, source/drain region contact oftransistor MN). In some embodiments, sidewall barrier seal 221 a/b isnot present. In one such embodiment, the sidewalls of the layers 211a/b, 212 a/n, and 213 are in direct contact with ILD (interlayerdielectric) such as SiO2.

FIG. 5 illustrates FE pillar capacitor 500 including cross-sectionalviews and a 3D view, in accordance with some embodiments. In variousembodiments, FE pillar capacitor 500 is cylindrical in shape. In someembodiments, FE pillar capacitor 500 is rectangular in shape. Taking thecylindrical shaped case for example, in some embodiments, the layers ofFE pillar capacitor 500 from the center going outwards include oxidescaffolding 502, bottom electrode 501 a, first conductive oxide 512 a,FE material 513, second conductive oxide 512 b, and top electrode 501 b.A cross-sectional view along the “ab” dashed line is illustrated in themiddle of FIG. 5 . In some embodiments, bottom electrode 501 a isconformally deposited over oxide scaffolding 502 (e.g., SiO2 or anyother suitable dielectric). In some embodiments, first conductive oxide512 a is conformally deposited over bottom electrode 501 a. In someembodiments, FE material 513 is conformally deposited over firstconductive oxide 512 a. In some embodiments, second conductive oxide 512b is conformally deposited over FE material 513. In some embodiments,top electrode 501 b is conformally deposited over second conductiveoxide 512 b. In some embodiments, the oxide scaffolding is etched andmetal is deposited into it which becomes part of bottom electrode 501 a.In some embodiments, a top section of FE pillar capacitor 500 that formsan upside-down ‘U’ shape is chopped off (e.g., by etching). This allowsbottom electrode 501 a to be accessible from the top and bottom of FEpillar capacitor 500, where bottom electrode 501 a is in the centerwhile top electrode 501 b is on an outer circumference of FE pillarcapacitor 500.

In various embodiments, the choice of materials for FE pillar capacitor500 are similar to the choice of material for FE planar capacitor 400.For example, the materials for FE pillar capacitor 500 can be selectedfrom a same group of materials listed for FE planar capacitor 400 inFIG. 2A. For example, material for bottom electrode 501 a corresponds tovia 209 b (e.g., bottom electrode), material for conductive oxide 212 bcorresponds to first conductive oxide 512 a, FE material 513 correspondsto FE material 213, material for second conductive oxide 212 acorresponds to second conductive oxide 512 b, and material for via 209 a(e.g., top electrode) corresponds to top electrode 501 b.

In some embodiments, a first refractive inter-metallic layer (not shown)is formed between FE material 513 and first conductive oxide 512 a. Insome embodiments, a second refractive inter-metallic layer (not shown)is formed between FE material 513 and second conductive oxide 512 b. Inthese cases, the first and second refractive inter-metallic layers aredirectly adjacent to their respective conductive oxide layers and to FEmaterial 513. Refractive inter-metallic maintains the FE properties ofFE material 513. In the absence of refractive inter-metallic, FEmaterial 513 (or the paraelectric material) of pillar capacitor 500 maylose its potency. In some embodiments, refractive inter-metalliccomprises Ti and Al (e.g., TiAl compound). In some embodiments,refractive inter-metallic comprises one or more of Ta, W, and/or Co.Material discussed with reference to layers 211 a and 211 b can be usedfor the first and second refractive inter-metallic layers. Thethicknesses of the layers of FE pillar capacitor 500 are of the samerange as similar layers discussed in FIG. 4 for FE planar capacitor 400.

FIG. 6 illustrates a 3D view of FE memory bit-cell 600 comprising aplanar transistor MN and FE pillar capacitor 500, where plate-line 215is parallel to word-line 217, in accordance with some embodiments.

FIG. 7 illustrates a 3D view of an FE memory bit-cell 700 comprising anon-planar transistor MN and FE pillar capacitor 500, where plate-line215 is parallel to word-line 217, in accordance with some embodiments.For both FIG. 6 and FIG. 7 , the descriptions of FIG. 2A and FIG. 3A,respectively, are applicable. The coupling of layers, material types,etc., are described in FIG. 2A and FIG. 3A, and not repeated here.

FIG. 8 illustrates bit-cell 800 (e.g., 101 _(0,0)) comprising onetransistor and ‘n’ FE capacitors (1TnC), in accordance with someembodiments. In some embodiments, bit-cell 800 comprises n-typetransistor MN₁, bit-line (BL), word-line (WL), and ‘n’ number offerroelectric (or paraelectric) capacitors Cfe1 through Cfen. In variousembodiments, the gate terminal of n-type transistor MN₁ is coupled toWL. In some embodiments, the drain or source terminal of n-typetransistor MN₁ is coupled to BL.

In various embodiments, first terminals of each of the capacitors Cfe1through Cfen is coupled to a storage node sn1, which is coupled to asource or drain terminal of n-type transistor MN₁. In some embodiments,second terminals of each of the capacitors Cfe1 through Cfen is coupledto a corresponding plate-line (PL). For example, the second terminal ofCfe1 is coupled to PL0, the second terminal of Cfe2 is coupled to PL01,and so on. In some embodiments, ferroelectric (or paraelectric)capacitors Cfe1 through Cfen are planar capacitors such as thosediscussed with reference to FIG. 4 . In some embodiments, ferroelectric(or paraelectric) capacitors Cfe1 through Cfen are pillar capacitorssuch as those discussed with reference to FIG. 5 . In some embodiments,the ferroelectric (or paraelectric) capacitors Cfe1 through Cfen arevertically stacked allowing for tall bit-cells (e.g., higher in thez-direction) but with same x-y footprint as a 1T1C bit-cell of FIG. 1A.The concept of vertical stacking of capacitors is also referred here asfolding of the capacitors in a vertical direction. By folding thecapacitors, the diffusion capacitance on the BL reduces for a givenarray size, which improves reading speed. Further, folding thecapacitors lowers the effective routing capacitance on the BL.

In this example, the x-y footprint is determined by the size oftransistor MN1 and its connections to BL, WL, and storage node sn1. Insome embodiments, the size can be limited by minimum capacitor areafootprint that can be printed, and is required to be of a certaindimension due to sense-charge requirements. In some embodiments, PL(e.g., PL0, PL1, . . . PLn) controls which cell within the same accesstransistor gets programmed, and the value of programming. In someembodiments, BL acts as a sense-line. The voltage on BL (e.g. sensevoltage) can create disturbance on other bit-lines during readoperation. To mitigate such disturbances, in some embodiments, the 1TnCbit-cell is periodically refreshed (e.g., every 1 second). In someembodiments, periodic refresh is minimized by refreshing in active modeof operation. In standby mode (e.g., low power mode), the 1TnC bit-cellis not refreshed as there is no disturb mechanism during standby.

In some embodiments, a method is provided for forming the 1TnC bit-cell.The method comprises forming a node and forming a first capacitorcomprising non-linear polar material, the first capacitor having a firstterminal coupled to the node and a second terminal coupled to a firstplate-line. In some embodiments, the method comprises forming a secondcapacitor comprising the non-linear polar material, the second capacitorhaving a first terminal coupled to the node and a second terminalcoupled to a second plate-line. In some embodiments, the methodcomprises forming a transistor coupled to the node and a bit-line,wherein the transistor is controllable by a word-line. In someembodiments, the method comprises vertically stacking the firstcapacitor and the second capacitor over one another. In someembodiments, the first capacitor and the second capacitor are pillarcapacitors that are cylindrical in shape. In some embodiments,vertically stacking the first capacitor and the second capacitor overone another is performed such that the first terminals of the firstcapacitor and the second capacitor is a conducting electrode that passesthrough centers of the first capacitor and the second capacitor.

In some embodiments, forming the first capacitor or the second capacitorcomprises forming a first layer comprising a first conducting material,wherein the first layer is coupled to the first terminal of the firstcapacitor. In some embodiments, the method comprises forming a secondlayer comprising a first conducting material, wherein the secondmaterial is around the first layer. In some embodiments, the methodcomprises forming a third layer comprising the non-linear polarmaterial, wherein the third layer is around the second layer. In someembodiments, the method comprises forming a fourth layer comprising asecond conducting material, wherein the fourth material is around thethird layer. In some embodiments, the method comprises a fifth layercomprising a second conducting material, wherein the first plate-line ispartially coupled to the fifth layer. In some embodiments, the firstlayer has a first circumference, wherein the second layer has a secondcircumference, wherein the third layer has a third circumference,wherein the fourth layer has a fourth circumference, and wherein thefifth layer has a fifth circumference, wherein the fourth circumferenceis larger than the third circumference, wherein the third circumferenceis larger than the second circumference, wherein the secondcircumference is larger than the first circumference. In someembodiments, the method comprises fabricating logic to refresh a firstcharge on the first capacitor, and to refresh a second charge on thesecond capacitor during an active mode. In some embodiments, the logicrefreshes periodically. In some embodiments, the first plate-line, thesecond plate-line, and the word-line are parallel relative to oneanother. In some embodiments, the first plate-line, the secondplate-line, and the bit-line are parallel relative to one another. Insome embodiments, the first capacitor and the second capacitor areplanar capacitors, wherein the first capacitor and the second capacitorare stacked one over another such that the first terminals of the firstcapacitor and the second capacitor are coupled through a via.

In some embodiments, the non-linear polar material includes one of:ferroelectric material, paraelectric material, or non-linear dielectric.In some embodiments, the non-linear polar material of the firstcapacitor is partially polarized to store multiple data values. In someembodiments, the method comprises applying the first plate-line withdifferent voltages at different times to create partially polarizedstates in the non-linear polar material of the first capacitor. In someembodiments, the first plate-line is applied with a constant voltage viaa time pulse having different widths to create partially polarizedstates in the non-linear polar material of the first capacitor.

In some embodiments, there is a possibility of disturbance at thestorage node sn1 during read operation. In some embodiments, PL istoggled for other capacitors to the average value of the disturbancethat will be seen on the sn1 node. i.e. when a read pulse of somepolarity is applied at PL line of the capacitor to be read, a non-zerovoltage is applied on other PLs of 1TnC bit-cell 800, that matches theexpected disturbance seen on the shared node. In one such example, PLline driver is configured to support driving different voltage levels ondifferent PLs.

FIG. 9 illustrates timing diagram 900 showing read and write operationsof the bit-cell of FIG. 8 , in accordance with some embodiments. Invarious embodiments, during write operation, WL is asserted (e.g., WLpulse is generated) which turns on transistor MN. The polarity of thebit to be stored depends on the polarity of PL0. When PL0 is a logic 1,a logic 1 is being written to FE capacitor (or paraelectric capacitor)Cfe1 coupled to PL0. When PL0 is a logic −1, a logic 0 is being writtento FE capacitor (or paraelectric capacitor) Cfe1 coupled to PL0.Likewise, other PLs are biased to store bits in correspondingcapacitors. In some embodiments, one capacitor is written at a time bybiasing the respective PL. In some embodiments, the capacitors Cfe1through Cfen are written to simultaneously via their respective PLs. Insome embodiments, when one capacitor is being written to, the PL forthat capacitor is biased (either to logic 1 or to negative supply level)while the other PLs are set to zero (e.g., ground voltage). The BLremains zero (at ground level) when data is written to the FE capacitors(or paraelectric capacitors) of the 1TnC. After write operation is over,WL pulse is de-asserted back to logic low (ground).

In various embodiments, during read operation, WL pulse is assertedfollowed by asserting the PL for the capacitor being read. In thisexample, PL0 is asserted to read contents from capacitor Cfe1. Duringthe time PL0 is asserted, when BL rises to logic level 1, then a zero isread out from the capacitor Cfe1 coupled to PL0. During the time PL0 isasserted, when BL rises to voltage level between supply (Vdd) andground, then a logic 1 is read out from the capacitor Cfe1 coupled toPL0. In some embodiments, a level-sensitive sense amplifier coupled toBL is used to sense the voltages on BL. In various embodiments, onecapacitor is read at a time. In some embodiments, PLs for othercapacitor structures within the 1TnC or multi-element FE gain bit-cell,which are not being read, can be driven to a non-zero value, to reducethe read disturbance field that will be seen across the capacitors thatshare the same bit-cell. As such, the capacitors share one of the nodetogether, thereby seeing the sense-voltage induced field across them. Inthis case, the PL for capacitors that are not being read can be drivento alternate voltage levels to reduce the disturb effect on them.

FIG. 10 illustrates a memory array 1000 with 1TnC bit-cells, inaccordance with some embodiments. This example is similar to M×N memoryarray 101, but for a 3×3 array of 1TnC bit-cells. A column of bit-cellsshares the same BL, while a row of bit-cells shares the same WL. Invarious embodiments, each row of bit-cells shares the PLs. In someembodiments, each bit-cell has a stack of capacitors. For a 512×512array, there will be 512 BLs, 512 WLs, 512 transistors, 512×n PLconnections, where n PL layers are stacked vertically, and 512×ncapacitors, where ‘n’ capacitors are stacked vertically.

FIGS. 11A-H illustrate cross-sections 1100, 1120, 1130, 1140, 1150,1160, 1170, and 1180, respectively, of 1TnC bit-cells showing formationof the 1TnC bit-cells, where the FE capacitors are planar capacitors onrespective pedestals, in accordance with some embodiments. Incross-section 1100, the snapshot shows several processing steps andtheir results. In this example, four transistors are shown, eachcontrolled by its respective WL on its gate terminal. The source anddrain terminals of each transistor is coupled to respective contacts(CA). A pair of transistors are grouped together and separated fromother pairs via isolation region. Etch stop layer is used in thefabrication of vias (via0) to connect the source and drain of thetransistors to BLs on metal-1 (M1) layer. Another etch stop layer isformed over M1 layer to fabricate vias (via1) to couple to respective M1layers. In some embodiments, metal-2 (M2) is deposited over vias (via1).M2 layer is then polished. In some embodiments, the capacitor can bemoved further up in the stack, where the capacitor level processing isdone between different layers. In some embodiments, BL can be escaped ona different layer than shown.

Cross-section 1120 shows deposition on an etch stop layer over thepolished M2 layer. In some embodiments, oxide is deposited over the etchstop layer. Thereafter, dry or wet etching is performed to form holesfor pedestals. The holes are filled with metal and land on therespective M2 layers. Fabrication processes such as interlayerdielectric (ILD) oxide deposition followed by ILD etch (to form holesfor the pedestals), deposition of metal into the holes, and subsequentpolishing of the surface are used to prepare for post pedestalfabrication.

Cross-section 1130 shows formation of planar ferroelectric orparaelectric capacitors on the pedestals. A number of fabricationprocesses of deposition, lithography, and etching takes place to formthe stack of layers for the planar capacitor, which is discussed withreference to FIG. 2A and FIG. 4 . In some embodiments, the planarferroelectric or paraelectric capacitors are formed in a backend of thedie. Cross-section 1140 shows deposition of ILD followed by surfacepolish. Cross-section 1150 shows formation of PL over top electrode ofeach capacitor. In this case, after polishing the surface as shown incross-section 1140, ILD is deposited. Thereafter, holes are etchedthrough the ILD to expose the top electrodes of the capacitors. Theholes are then filled with metal. Followed by filling the holes, the topsurface is polished. As such, the capacitors are connected to PL andstorage nodes (through the pedestals). Cross-section 1150 shows anotherstep of ILD deposition over the polished surface. Holes for via are thenetched to contact the M2 layer. The holes are filled with metal to formvias (via2). The top surface is then polished. Cross-section 1160 showsthe repetition of the process of depositing metal over the vias (via2),depositing ILD, etching holes to form pedestals for the next capacitorsof the stack, forming the capacitors, and then forming vias that contactthe M3 layer. This process is repeated ‘n’ times for forming ‘n’capacitors in a stack as shown in cross-section 1170.

FIG. 11I illustrates cross-section 1190 of 1TnC bit-cells where the FEcapacitors are planar capacitors on respective metal layers, inaccordance with some embodiments. Compared to the fabrication processesdiscussed with reference to FIGS. 11A-H, pedestals are not formed. Thebottom electrode of each capacitor is allowed to directly contact withthe metal below. In this embodiment, the height of the stackedcapacitors is lowered, and the fabrication process is simplified becausethe extra steps for forming the pedestals are removed.

FIG. 11J illustrates cross-section 1195 of 1TnC bit-cells where the FEcapacitors are planar capacitors on respective metal layers through viasor pedestals, in accordance with some embodiments. Compared to thefabrication processes discussed with reference to FIGS. 11A-H, pedestalsor vias are formed for both the top and bottom electrodes of the FEcapacitor. In this embodiment, the height of the stacked capacitors israised, and the fabrication process adds an additional step of forming atop pedestal or via which contacts with the plate-line (PL).

FIG. 12 illustrates tower 1200 of pillar capacitors with shared bit-lineor storage node, and separate plate-lines for each pillar capacitor, inaccordance with some embodiments. An example of pillar capacitor isdiscussed with reference to FIG. 5 . As discussed with reference to FIG.5 , the top section of the pillar capacitor is chopped off (e.g., viewetching) leaving circular layers around one another as shown incross-section “ab”. Each capacitor formed over the other capacitor isinsulated by insulating material 1201. Any suitable non-conductiveinsulating material may be used. In this example, four capacitors Cfe1,Cfe2, Cfe3, and Cfe4 are shown in a vertical stack. However, any numberof capacitors may be stacked. The center core (or oxide scaffolding) 502of the capacitors is etched to remove the ILD and is filled with metalthat directly connects to bottom electrode 501 a via center core 502.Plate-lines are extended over a section of top electrode 501 b for eachcapacitor as shown in the cross-sectional view. The core metal passingthrough the center of the capacitors is coupled to BL or storage nodeSN, in accordance with some embodiments. While the embodiments are shownfor a cylindrical pillar capacitor, the same concept can be applied to asquare or square-like pillar capacitor.

FIG. 13 illustrates 3D view 1300 of a tower of pillar capacitors of FIG.12 with shared bit-line or storage node, and separate plate-lines foreach pillar capacitor, in accordance with some embodiments.

FIG. 14 illustrates cross-section 1400 of multiple towers of pillarcapacitors, each tower having a corresponding shared bit-line or storagenode, and where pillar capacitor of a tower has corresponding plate-lineshared with other pillar capacitors of other towers, in accordance withsome embodiments. In this example, part of a first row of a memory arrayis shown with four bit-cells having four respective storage nodes (SN1,SN2, SN3, and SN4), four plate-lines (PL1_1, PL2_2, PL31, PL4_1), andfour capacitors per storage node (or per bit-line). Each PL is extendedto couple part of the top electrode of each capacitor. The capacitorsare separated by insulating material 1201. Storage nodes 1401-1, 1401-2,1401-3, and 1401-4 are connected to source or drain terminal ofrespective transistors. The drain or source terminals of the transistorsare then coupled to the respective bit-line of the memory bit-cell.

FIG. 15 illustrates cross-section 1500 of 1TnC bit-cells where the FEcapacitors are pillar capacitors, in accordance with some embodiments.This example four 1TnC bit-cells are shown, where ‘n’ is four. Eachgroup of capacitors for a bit-cell has a column of shared metal passingthrough the center of the capacitors, where the shared metal is thestorage node which is coupled to the stub and then to the source ordrain terminal. Top electrode of each of the capacitor is partiallyadjacent to a respective plate-line. In this example, the capacitors areformed between regions reserved for Via1 through Via5 (e.g., between M1through M6 layers).

FIG. 16 illustrates cross-section 1600 of a plurality of pillarcapacitors of 1TnC bit-cells where plate-line is parallel to bit-line,in accordance with some embodiments. Cross-section 1600 shows a top-downview of an array of bit-cells where PL is parallel to the SN or BL, andorthogonal to the WL. This view shows the various capacitors of 3bit-cells sharing their respective PL, which is coupled to part of thetop electrodes 501 b of each capacitor in a row.

FIG. 17 illustrates cross-section 1700 of a plurality of pillarcapacitors of 1TnC bit-cells where plate-line is parallel to word-line,in accordance with some embodiments. Compared to cross-section 1600,here PLs are parallel to WLs and orthogonal to the SNs.

FIG. 18 illustrates bit-cell 1800 comprising two transistors and ‘n’ FEcapacitors (multi-element FE gain bit-cell), in accordance with someembodiments. In some embodiments, bit-cell 1800 comprises n-typetransistor MN₁, np-type transistor MTR₁, bit-line (BL), word-line (WL),select-line (SL), and ‘n’ number of ferroelectric (or paraelectric)capacitors Cfe1 through Cfen. In various embodiments, the gate terminalof n-type transistor MN₁ is coupled to WL (e.g., WL1). In someembodiments, the drain or source terminal of n-type transistor MN₁ iscoupled to BL.

In various embodiments, first terminals of each of the capacitors Cfe1through Cfen is coupled to a storage node sn1. The storage node sn1 iscoupled to a source or drain terminal of n-type transistor MN₁ and to agate of transistor MTR₁. In various embodiments, drain or sourceterminal of MTR1 is coupled to a bias voltage Vs. In some embodiments,Vs is a programmable voltage that can be generated by any suitablesource. Vs voltage helps in biasing the gain transistor in conjunctionwith the sense-voltage that builds at sn1 node. In some embodiments, thesource or drain terminal of transistor MTL1 is coupled to SL (e.g.,SL1). In some embodiments, a p-type transistor can be used as well forgain.

In some embodiments, second terminals of each of the capacitors Cfe1through Cfen is coupled to a corresponding plate-line (PL). For example,the second terminal of Cfe1 is coupled to PL1_1, the second terminal ofCfe2 is coupled to PL1_2, and so on. In some embodiments, ferroelectric(or paraelectric) capacitors Cfe1 through Cfen are planar capacitorssuch as those discussed with reference to FIG. 4 . In some embodiments,ferroelectric (or paraelectric) capacitors Cfe1 through Cfen are pillarcapacitors such as those discussed with reference to FIG. 5 . In someembodiments, the ferroelectric (or paraelectric) capacitors Cfe1 throughCfen are vertically stacked allowing for tall bit-cells (e.g., higher inthe z-direction) but with x-y footprint two transistors. By folding thecapacitors, the diffusion capacitance on the BL reduces for a givenarray size, which improves reading speed. Further, folding thecapacitors lowers the effective routing capacitance on the BL. Thelarger footprint in the x-y direction of multi-element FE gain bit-cellcompared to the footprint in the x-y direction of 1TnC bit-cell,vertical height of the capacitor can be reduced as the capacitors canexpand in the x-y direction more than before for a given height. Assuch, capacitors are folded more effectively. For example, n/2capacitors per metal or via layer can be packed. In various embodiments,more capacitors can be stacked in multi-element FE gain bit-cell becausestorage node sn is decoupled from the BL. The multi-element FE gainbit-cell reduces the thickness scaling requirement for the pillarcapacitor. The polarization density requirements are reduced formulti-element FE gain bit-cell compared to 1TnC bit-cell.

In this example, the x-y footprint is determined by the size oftransistor MN1 and its connections to BL, WL, and storage node sn1. Insome embodiments, the footprint can still be decided by other factorssuch as: a number of capacitors that connect to the node, and how thecapacitors are arranged, e.g., more folding on the same node versusstacking, effective size constraints on those capacitors, and number ofcapacitors that share the same bit-cell. In some embodiments, PL (e.g.,PL0, PL1, . . . PLn) controls which cell within the same accesstransistor gets programmed, and the value of programming. In someembodiments, BL acts as a sense-line. The voltage on BL (e.g. sensevoltage) can create disturbance on other bit-lines during readoperation. To mitigate such disturbances, in some embodiments,multi-element FE gain bit-cell 1800 is periodically refreshed (e.g.,every 1 second). In some embodiments, periodic refresh is minimized byrefreshing in active mode of operation that can be coupled with advanceschemes for wear leveling. In standby mode (e.g., low power mode),multi-element FE gain bit-cell 1800 is not refreshed as there is nodisturb mechanism during standby. In some embodiments, multi-element FEgain bit-cell 1800 relies on isolating the read mode from BL or SLcapacitance by isolating through access transistor MN₁, where MN₁transistor facilitates pre-charging the SN1 node, prior to readoperation.

In some embodiments, there is a possibility of disturbance at thestorage node sn1 during read operation. In some embodiments, PL istoggled for other capacitors to the average value of the disturbancethat will be seen on the sn1 node. i.e. when a read pulse of somepolarity is applied at PL line of the capacitor to be read, a non-zerovoltage is applied on other PLs of multi-element FE gain bit-cell 1800,that matches the expected disturbance seen on the shared node. In onesuch example, PL line driver is configured to support driving differentvoltage levels on different PLs.

FIG. 19 illustrates timing diagram 1900 showing read and writeoperations of the bit-cell of FIG. 18 , in accordance with someembodiments. To write to a capacitor of multi-element FE gain bit-cell,WL is turned on (e.g., a WL pulse is asserted) followed by activatingone of the PLs for the capacitor to be written to. In this example, PL0is activated. To write a logic 1 to capacitor Cfe1, PT determines thestage for different capacitor. To write to Cfe1, PL0 is asserted (e.g.,PL0 pulse is asserted) while WL pulse is asserted. In some embodiments,to write a logic 0 to capacitor Cfe1, PL0 is negatively pulsed (e.g.,−Vdd) while WL pulse is asserted. The write operation is disturb freeoperation because transistor MN1 holds storage node n1 to ground, inaccordance with some embodiments. In some embodiments, all capacitors instack of multi-element FE gain bit-cell can be written in parallel orsimultaneously.

In some embodiments, prior to reading the contents of a capacitor (e.g.,Cfe1), storage node Sn1 is pre-charged in a pre-charge phase. BLpre-charge helps transistor MTR1 to be biased at a voltage level by Vswhere it provides larger current difference for read of 1 versus read of0. In some embodiments, polarization dependent current from MTR1 helpsamplify signal with time-integration window as control on SL.

In the pre-charge phase, WL and BL are asserted, all the PLs are raisedto a voltage level between ground and Vdd (supply) or alternativelybetween +Vdd and −Vss. For example, the PLs are raised to 0.5 Vdd ormid-rails of PL line drive. That causes sn1 to pre-charge to aboutmid-rail (e.g., half of Vdd) or mid-rail of PL line. The exact nature ofsignaling are only illustrative, where this 0.5Vdd can be a zerovoltage, with PL signaling requirement of +/−Vdd. To read from capacitorCfe1, PL0 is then asserted from its pre-charged level. During the timePL0 is asserted, other PLs are kept at mid-rail. At this point, voltagebegins to develop on node sn1. At least two levels of voltages arepossible on sn1 after pre-charge during read operation. The voltage onsn1 in conjunction with the gain transistor will then create differentcurrent on SL line. This current delta can either be then checkedagainst reference value to determine a 1 signal or a 0 signal usingeither a current mode sense amplifier or with a current to voltageconversion and a voltage based sense amplifier.

FIG. 20 illustrates cross-section 2000 of a plurality of pillarcapacitors of multi-element FE gain bit-cells where plate-line isparallel to bit-line, in accordance with some embodiments. Cross-section2000 is similar to cross-section 1600 but for addition of extrainterconnect SL.

Table 1 summarizes a comparison of 1T1C, 1TnC, and multi-element FE gainmemory bit-cells.

TABLE 1 multi-element FE 1T1C 1TnC gain bit-cell Stackability of NoMedium High Capacitor Polarization High Medium Low density requirementRelative 3x (planar) relative Approx. 4x to 8x Greater than 8x celldensity to DRAM of DRAM relative to DRAM (has speed vs. densitytradeoff) Speed fast medium Slow (has speed vs. density tradeoff)Refresh during No Yes Yes operation Refresh during No No No standbyWrite disturb No No No Read disturb No Yes Yes Array size Planartransistor Medium Low limitation (high) to power Non-planar (medium)Planar footprint 1T (low) 1T (low) 2T (medium) of the cell Array sizehigh medium low limitation to functionality

In some embodiments, the 1T1C, 1TnC, and multi-element FE gain bit-cellsare multi-level bit-cells. To realize multi-level bit-cells, theferroelectric (or paraelectric) capacitor is placed in a partiallyswitched polarization state. Partial polarization state can be achievedby applying either different voltage levels to the capacitor, ordifferent time pulse widths at the same or constant voltage level. Byusing stacked capacitor in combination of multi-level programming of thebit-cells, higher storage density per bit-cell can be achieved, inaccordance with various embodiments.

Table 2 illustrates multi-level storage in 1T1C bit-cell using differentvoltage levels applied to the ferroelectric or paraelectric capacitor.

TABLE 2 Write PL =+ V1 PL =+ 1.5*V1 PL =− V1 PL =− 1.5*V1 Remnant +pr1+pr2 −pr1 −pr2 polarization (10 state) (11 state) (01 state) (00 state)state Read (apply PL =+ 1.5*V1) delta dp (11) dp (01 state) dp (00state) polarization (dp) dp (10 state) Sense charge pr2 − pr1 0 pr2 +pr1 2*pr2

Table 3 illustrates multi-level storage in 1T1C bit-cell using differenttime pulse width (PW) at the same voltage level applied to theferroelectric or paraelectric capacitor.

TABLE 3 Write PL =+ V, PL =+ V, PL =− V, PL =− V, PW = T0 PW = 2*T0 PW =T0 PW = 2*T0 Remnant +pr1 +pr2 −pr1 −pr2 polarization (10 state) (11state) (01 state) (00 state) state Read (apply PL =+ V, PW = 2*T0) dp(10 state) dp (11) dp (01 state) dp (00 state) Sense charge pr2 − pr1 0pr2 + pr1 2*pr2

FIG. 21 illustrates 1TnC FE memory differential bit-cell 2100, inaccordance with some embodiments. Bit-cell 2100 comprises two copies ofbit-cell 800, where one bit-cell is complementary to the other. Here,two bit-cells are shown 101 _(0,0_A) and 101 _(0,0_B), that togetherform 1TnC differential bit-cell 2100. Both bit-cells share a common WL,and each bit-cell has its own transistor. The plate-lines (e.g., PLB0,PLB1, through PLBn) for bit-cell 101 _(0,0_B) are inverse orcomplementary of the plate-lines (e.g., PL0, PL2, through PLn) forbit-cell 101 _(0,0_A). The same is true for bit-lines. For example, thebit-line (BLB) for bit-cell 101 _(0,0_B) is an inverse or complementaryof the bit-line (BL) for bit-cell 101 _(0,0_A).

FIG. 22 illustrates multi-element FE gain differential bit-cell 2200, inaccordance with some embodiments. Multi-element FE gain differentialbit-cell 2200 comprises two copies of bit-cell 1800, where one bit-cellis complementary to the other. Here, two bit-cells are shown 101_(0,0_A) and 101 _(0,0_B), that together form multi-element FE gaindifferential bit-cell 2200. Both bit-cells share a common WL, and eachbit-cell has its own transistors. The plate-lines (e.g., PLB0, PLB1,through PLBn) for bit-cell 101 _(0,0_B) are inverse or complementary ofthe plate-lines (e.g., PL0, PL2, through PLn) for bit-cell 101 _(0,0_A).The same is true for bit-lines and source or select lines. For example,the bit-line (BLB) for bit-cell 101 _(0,0_B) is an inverse orcomplementary of the bit-line (BL) for bit-cell 101 _(0,0_A), and theselect-line (SLB) for bit-cell 101 _(0,0_B) is inverse or complementaryof the select-line (SL) for bit-cell 101 _(0,0_A),

FIG. 23 illustrates a smart memory chip having FE memory bit-cells andartificial intelligence (AI) processor, in accordance with someembodiments. SOC 2300 comprises memory 2301 having static random-accessmemory (SRAM) or FE based random access memory FE-RAM, or any othersuitable memory. The memory can be non-volatile (NV) or volatile memory.Memory 2301 may also comprise logic 2303 to control memory 2302. Forexample, write and read drivers are part of logic 2303. These driversand other logic are implemented using the majority or threshold gates ofvarious embodiments. The logic can comprise majority or threshold gatesand traditional logic (e.g., CMOS based NAND, NOR etc.). In someembodiments, any of the blocks described herein can include the variouskinds of bit-cells described herein.

SOC 2300 further comprises a memory I/O (input-output) interface 2304.The interface may be double-data rate (DDR) compliant interface or anyother suitable interface to communicate with a processor. Processor 2305of SOC 2300 can be a single core or multiple core processor. Processor2305 can be a general-purpose processor (CPU), a digital signalprocessor (DSP), or an Application Specific Integrated Circuit (ASIC)processor. In some embodiments, processor 2305 is an artificialintelligence (AI) processor (e.g., a dedicated AI processor, a graphicsprocessor configured as an AI processor). In various embodiments,processor 2305 is a processor circuitry which is to execute one or moreinstructions.

AI is a broad area of hardware and software computations where data isanalyzed, classified, and then a decision is made regarding the data.For example, a model describing classification of data for a certainproperty or properties is trained over time with large amounts of data.The process of training a model requires large amounts of data andprocessing power to analyze the data. When a model is trained, weightsor weight factors are modified based on outputs of the model. Onceweights for a model are computed to a high confidence level (e.g., 95%or more) by repeatedly analyzing data and modifying weights to get theexpected results, the model is deemed “trained.” This trained model withfixed weights is then used to make decisions about new data. Training amodel and then applying the trained model for new data is hardwareintensive activity. In some embodiments, AI processor 405 has reducedlatency of computing the training model and using the training model,which reduces the power consumption of such AI processor systems.

Processor 2305 may be coupled to a number of other chip-lets that can beon the same die as SOC 2300 or on separate dies. These chip-lets includeconnectivity circuitry 2306, I/O controller 2307, power management 2308,and display system 2309, and peripheral connectivity 2310.

Connectivity circuitry 2306 represents hardware devices and softwarecomponents for communicating with other devices. Connectivity circuitry2306 may support various connectivity circuitries and standards. Forexample, connectivity circuitry 2306 may support GSM (global system formobile communications) or variations or derivatives, CDMA (code divisionmultiple access) or variations or derivatives, TDM (time divisionmultiplexing) or variations or derivatives, 3rd Generation PartnershipProject (3GPP) Universal Mobile Telecommunications Systems (UMTS) systemor variations or derivatives, 3GPP Long-Term Evolution (LTE) system orvariations or derivatives, 3GPP LTE-Advanced (LTE-A) system orvariations or derivatives, Fifth Generation (5G) wireless system orvariations or derivatives, 5G mobile networks system or variations orderivatives, 5G New Radio (NR) system or variations or derivatives, orother cellular service standards. In some embodiments, connectivitycircuitry 2306 may support non-cellular standards such as WiFi.

I/O controller 2307 represents hardware devices and software componentsrelated to interaction with a user. I/O controller 2307 is operable tomanage hardware that is part of an audio subsystem and/or displaysubsystem. For example, input through a microphone or other audio devicecan provide input or commands for one or more applications or functionsof SOC 2300. In some embodiments, I/O controller 2307 illustrates aconnection point for additional devices that connect to SOC 2300 throughwhich a user might interact with the system. For example, devices thatcan be attached to the SOC 2300 might include microphone devices,speaker or stereo systems, video systems or other display devices,keyboard or keypad devices, or other I/O devices for use with specificapplications such as card readers or other devices.

Power management 2308 represents hardware or software that perform powermanagement operations, e.g., based at least in part on receivingmeasurements from power measurement circuitries, temperature measurementcircuitries, charge level of battery, and/or any other appropriateinformation that may be used for power management. By using majority andthreshold gates of various embodiments, non-volatility is achieved atthe output of these logic. Power management 2308 may accordingly putsuch logic into low power state without the worry of losing data. Powermanagement may select a power state according to Advanced Configurationand Power Interface (ACPI) specification for one or all components ofSOC 2300.

Display system 2309 represents hardware (e.g., display devices) andsoftware (e.g., drivers) components that provide a visual and/or tactiledisplay for a user to interact with the processor 2305. In someembodiments, display system 2309 includes a touch screen (or touch pad)device that provides both output and input to a user. Display system2309 may include a display interface, which includes the particularscreen or hardware device used to provide a display to a user. In someembodiments, the display interface includes logic separate fromprocessor 2305 to perform at least some processing related to thedisplay.

Peripheral connectivity 2310 may represent hardware devices and/orsoftware devices for connecting to peripheral devices such as printers,chargers, cameras, etc. Peripheral connectivity 2310 may supportcommunication protocols, e.g., PCIe (Peripheral Component InterconnectExpress), USB (Universal Serial Bus), Thunderbolt, High DefinitionMultimedia Interface (HDMI), Firewire, etc.

Reference in the specification to “an embodiment,” “one embodiment,”“some embodiments,” or “other embodiments” means that a particularfeature, structure, or characteristic described in connection with theembodiments is included in at least some embodiments, but notnecessarily all embodiments. The various appearances of “an embodiment,”“one embodiment,” or “some embodiments” are not necessarily allreferring to the same embodiments. If the specification states acomponent, feature, structure, or characteristic “may,” “might,” or“could” be included, that particular component, feature, structure, orcharacteristic is not required to be included. If the specification orclaim refers to “a” or “an” element, that does not mean there is onlyone of the elements. If the specification or claims refer to “anadditional” element, that does not preclude there being more than one ofthe additional elements.

Furthermore, the particular features, structures, functions, orcharacteristics may be combined in any suitable manner in one or moreembodiments. For example, a first embodiment may be combined with asecond embodiment anywhere the particular features, structures,functions, or characteristics associated with the two embodiments arenot mutually exclusive.

While the disclosure has been described in conjunction with specificembodiments thereof, many alternatives, modifications and variations ofsuch embodiments will be apparent to those of ordinary skill in the artin light of the foregoing description. The embodiments of the disclosureare intended to embrace all such alternatives, modifications, andvariations as to fall within the broad scope of the appended claims.

In addition, well known power/ground connections to integrated circuit(IC) chips and other components may or may not be shown within thepresented figures, for simplicity of illustration and discussion, and soas not to obscure the disclosure. Further, arrangements may be shown inblock diagram form in order to avoid obscuring the disclosure, and alsoin view of the fact that specifics with respect to implementation ofsuch block diagram arrangements are highly dependent upon the platformwithin which the present disclosure is to be implemented (i.e., suchspecifics should be well within purview of one skilled in the art).Where specific details (e.g., circuits) are set forth in order todescribe example embodiments of the disclosure, it should be apparent toone skilled in the art that the disclosure can be practiced without, orwith variation of, these specific details. The description is thus to beregarded as illustrative instead of limiting.

Following examples illustrates the various embodiments. Any one examplecan be combined with other examples described herein.

Example 1: A bit cell apparatus comprising: a node; a first capacitorcomprising non-linear polar material, the first capacitor having a firstterminal coupled to the node and a second terminal coupled to a firstplate-line; a second capacitor comprising the non-linear polar material,the second capacitor having a first terminal coupled to the node and asecond terminal coupled to a second plate-line; and a transistor coupledto the node and a bit-line, wherein the transistor is controllable by aword-line.

Example 2: The apparatus of example 1, wherein the first capacitor andthe second capacitor are vertically stacked over one another.

Example 3: The apparatus of example 1, wherein the first capacitor andthe second capacitor are pillar capacitors that are cylindrical inshape, wherein the first capacitor and the second capacitor stacked oneover another such that the first terminals of the first capacitor andthe second capacitor is a conducting electrode that passes throughcenters of the first capacitor and the second capacitor.

Example 4: The apparatus of example 3, wherein the first capacitor orthe second capacitor comprises: a first layer comprising a firstconducting material, wherein the first layer is coupled to the firstterminal of the first capacitor; a second layer comprising a firstconducting material, wherein the second material is around the firstlayer; a third layer comprising the non-linear polar material, whereinthe third layer is around the second layer; a fourth layer comprising asecond conducting material, wherein the fourth material is around thethird layer; and a fifth layer comprising a second conducting material,wherein the first plate-line is partially coupled to the fifth layer.

Example 5: The apparatus of example 4, wherein the first layer has afirst circumference, wherein the second layer has a secondcircumference, wherein the third layer has a third circumference,wherein the fourth layer has a fourth circumference, and wherein thefifth layer has a fifth circumference, wherein the fourth circumferenceis larger than the third circumference, wherein the third circumferenceis larger than the second circumference, wherein the secondcircumference is larger than the first circumference.

Example 6: The apparatus of example 1 comprising logic to refresh afirst charge on the first capacitor, and to refresh a second charge onthe second capacitor during an active mode.

Example 7: The apparatus of example 6, wherein the logic is to refreshperiodically.

Example 8: The apparatus of example 1, wherein the first plate-line, thesecond plate-line, and the word-line are parallel relative to oneanother.

Example 9: The apparatus of example 1, wherein the first plate-line, thesecond plate-line, and the bit-line are parallel relative to oneanother.

Example 10: The apparatus of example 1, wherein the first capacitor andthe second capacitor are planar capacitors, wherein the first capacitorand the second capacitor are stacked one over another such that thefirst terminals of the first capacitor and the second capacitor arecoupled through a via.

Example 11: The apparatus of example 1, wherein the non-linear polarmaterial includes one of: ferroelectric material, paraelectric material,or non-linear dielectric.

Example 12: The apparatus of example 1, wherein the non-linear polarmaterial of the first capacitor is partially polarized to store multipledata values.

Example 13: The apparatus of example 1, wherein the first plate-line isapplied with different voltages at different times to create partiallypolarized states in the non-linear polar material of the firstcapacitor.

Example 14: The apparatus of example 1, wherein the first plate-line isapplied with a constant voltage via a time pulse having different widthsto create partially polarized states in the non-linear polar material ofthe first capacitor.

Example 15: The apparatus of example 11, wherein the ferroelectricmaterial includes one of: Bismuth ferrite (BFO), BFO with a dopingmaterial where in the doping material is one of Lanthanum, or elementsfrom lanthanide series of periodic table; Lead zirconium titanate (PZT),or PZT with a doping material, wherein the doping material is one of La,Nb; relaxor ferroelectric which includes one of lead magnesium niobate(PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanumzirconate titanate (PLZT), lead scandium niobate (PSN), BariumTitanium-Bismuth Zinc Niobium Tantalum (BT-BZNT), or BariumTitanium-Barium Strontium Titanium (BT-BST); perovskite includes one of:BaTiO3, PbTiO3, KNbO3, or NaTaO3; hexagonal ferroelectric includes oneof: YMnO3, or LuFeO3; hexagonal ferroelectrics of a type h-RMnO3, whereR is a rare earth element which includes one of: cerium (Ce), dysprosium(Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho),lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr),promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium(Tm), ytterbium (Yb), or yttrium (Y); Hafnium (Hf), Zirconium (Zr),Aluminum (Al), Silicon (Si), their oxides or their alloyed oxides;Hafnium oxides as Hf1-x Ex Oy, where E can be Al, Ca, Ce, Dy, er, Gd,Ge, La, Sc, Si, Sr, Sn, or Y; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)Nor Al(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca,Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction;Niobate type compounds LiNbO3, LiTaO3, Lithium iron Tantalum OxyFluoride, Barium Strontium Niobate, Sodium Barium Niobate, or Potassiumstrontium niobate; or improper ferroelectric includes one of: [PTO/STO]nor [LAO/STO]n, where ‘n’ is between 1 to 100.

Example 16: A system comprising: a memory to store instructions; aprocessor circuitry to execute instructions; and a wireless interface toallow the processor circuitry to communicate with another device,wherein the memory includes: a node; a first capacitor comprisingnon-linear polar material, the first capacitor having a first terminalcoupled to the node and a second terminal coupled to a first plate-line;a second capacitor comprising the non-linear polar material, the secondcapacitor having a first terminal coupled to the node and a secondterminal coupled to a second plate-line; and a transistor coupled to thenode and a bit-line, wherein the transistor is controllable by aword-line.

Example 17: The system of example 16, wherein the first capacitor andthe second capacitor are vertically stacked over one another.

Example 18: The system of example 16, wherein the first capacitor andthe second capacitor are pillar capacitors that are cylindrical inshape, wherein the first capacitor and the second capacitor stacked oneover another such that the first terminals of the first capacitor andthe second capacitor is a conducting electrode that passes throughcenters of the first capacitor and the second capacitor.

Example 19: An apparatus comprising: a node; a first capacitorcomprising non-linear polar material, the first capacitor having a firstterminal coupled to the node and a second terminal coupled to a firstplate-line; a second capacitor comprising the non-linear polar material,the second capacitor having a first terminal coupled to the node and asecond terminal coupled to a second plate-line; and a transistor coupledto the node and a bit-line, wherein the transistor is controllable by aword-line, wherein the non-linear polar material is partially polarizedto store multi-level states in the first capacitor or the secondcapacitor.

Example 20: The apparatus of example 19, wherein the first plate-line isapplied with different voltages at different times to create partiallypolarized states in the non-linear polar material of the firstcapacitor, or wherein the first plate-line is applied with a constantvoltage via a time pulse having different widths to create partiallypolarized states in the non-linear polar material of the firstcapacitor.

Example 21: A method comprising: forming a node; forming a firstcapacitor comprising non-linear polar material, the first capacitorhaving a first terminal coupled to the node and a second terminalcoupled to a first plate-line; forming a second capacitor comprising thenon-linear polar material, the second capacitor having a first terminalcoupled to the node and a second terminal coupled to a secondplate-line; and forming a transistor coupled to the node and a bit-line,wherein the transistor is controllable by a word-line.

Example 22: The method of example 21 comprising vertically stacking thefirst capacitor and the second capacitor over one another.

Example 23: The method of example 21, wherein the first capacitor andthe second capacitor are pillar capacitors that are cylindrical inshape.

Example 24: The method of example 21, wherein vertically stacking thefirst capacitor and the second capacitor over one another is performedsuch that the first terminals of the first capacitor and the secondcapacitor is a conducting electrode that passes through centers of thefirst capacitor and the second capacitor.

Example 1b: A bit cell apparatus comprising: a first node; a secondnode; a first capacitor comprising non-linear polar material, the firstcapacitor having a first terminal coupled to the first node and a secondterminal coupled to a first plate-line; a second capacitor comprisingthe non-linear polar material, the second capacitor having a firstterminal coupled to the first node and a second terminal coupled to asecond plate-line; a first transistor coupled to the first node and abit-line, wherein the transistor is controllable by a word-line; and asecond transistor having a gate terminal coupled to the first node, anda source terminal coupled to a source-line and a drain terminal coupledto the second node.

Example 2b: The apparatus of example 1b, wherein the first capacitor andthe second capacitor are vertically stacked over one another.

Example 3b: The apparatus of example 1b, wherein the first capacitor andthe second capacitor are pillar capacitors that are cylindrical inshape, wherein the first capacitor and the second capacitor stacked oneover another such that the first terminals of the first capacitor andthe second capacitor is a conducting electrode that passes throughcenters of the first capacitor and the second capacitor.

Example 4b: The apparatus of example 3b, wherein the first capacitor orthe second capacitor comprises: a first layer comprising a firstconducting material, wherein the first layer is coupled to the firstterminal of the first capacitor; a second layer comprising a firstconducting material, wherein the second material is around the firstlayer; a third layer comprising the non-linear polar material, whereinthe third layer is around the second layer; a fourth layer comprising asecond conducting material, wherein the fourth material is around thethird layer; and a fifth layer comprising a second conducting material,wherein the first plate-line is partially coupled to the fifth layer.

Example 5b: The apparatus of example 4b, wherein the first layer has afirst circumference, wherein the second layer has a secondcircumference, wherein the third layer has a third circumference,wherein the fourth layer has a fourth circumference, and wherein thefifth layer has a fifth circumference, wherein the fourth circumferenceis larger than the third circumference, wherein the third circumferenceis larger than the second circumference, wherein the secondcircumference is larger than the first circumference.

Example 6b: The apparatus of example 1b comprising logic to refresh afirst charge on the first capacitor, and to refresh a second charge onthe second capacitor during an active mode.

Example 7b: The apparatus of example 6b, wherein the logic is to refreshperiodically.

Example 8b: The apparatus of example 1b, wherein the first plate-line,the second plate-line, and the word-line are parallel relative to oneanother.

Example 9b: The apparatus of example 1b, wherein the first plate-line,the second plate-line, and the bit-line are parallel relative to oneanother.

Example 10b: The apparatus of example 1b, wherein the bit-line and thesource-line are parallel to one another.

Example 11b: The apparatus of example 1b, wherein the first capacitorand the second capacitor are planar capacitors, wherein the firstcapacitor and the second capacitor are stacked one over another suchthat the first terminals of the first capacitor and the second capacitorare coupled through a via.

Example 12b: The apparatus of example 1b, wherein the non-linear polarmaterial includes one of: ferroelectric material, para-electricmaterial, or non-linear dielectric.

Example 13b: The apparatus of example 1b, wherein the non-linear polarmaterial of the first capacitor is partially polarized to store multipledata values.

Example 14b: The apparatus of example 1b, wherein the first plate-lineis applied with different voltages at different times to createpartially polarized states in the non-linear polar material of the firstcapacitor.

Example 15b: The apparatus of example 1b, wherein the first transistorand the second transistor are of a same conductivity type.

Example 16b: The apparatus of example 1b, wherein the first transistorand the second transistor are one of planar transistors or non-planartransistors.

Example 17b: The apparatus of example 1b, wherein the first plate-lineis applied with a constant voltage via a time pulse having differentwidths to create partially polarized states in the non-linear polarmaterial of the first capacitor.

Example 18b: The apparatus of example 17b, wherein the ferroelectricmaterial includes one of: Bismuth ferrite (BFO), BFO with a dopingmaterial where in the doping material is one of Lanthanum, or elementsfrom lanthanide series of periodic table; Lead zirconium titanate (PZT),or PZT with a doping material, wherein the doping material is one of La,Nb; relaxor ferroelectric which includes one of lead magnesium niobate(PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanumzirconate titanate (PLZT), lead scandium niobate (PSN), BariumTitanium-Bismuth Zinc Niobium Tantalum (BT-BZNT), or BariumTitanium-Barium Strontium Titanium (BT-BST); perovskite includes one of:BaTiO3, PbTiO3, KNbO3, or NaTaO3; hexagonal ferroelectric includes oneof: YMnO3, or LuFeO3; hexagonal ferroelectrics of a type h-RMnO3, whereR is a rare earth element which includes one of: cerium (Ce), dysprosium(Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho),lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr),promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium(Tm), ytterbium (Yb), or yttrium (Y); Hafnium (Hf), Zirconium (Zr),Aluminum (Al), Silicon (Si), their oxides or their alloyed oxides;Hafnium oxides as Hf1-x Ex Oy, where E can be Al, Ca, Ce, Dy, er, Gd,Ge, La, Sc, Si, Sr, Sn, or Y; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)Nor Al(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca,Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction;Niobate type compounds LiNbO3, LiTaO3, Lithium iron Tantalum OxyFluoride, Barium Strontium Niobate, Sodium Barium Niobate, or Potassiumstrontium niobate; or improper ferroelectric includes one of: [PTO/STO]nor [LAO/STO]n, where ‘n’ is between 1 to 100.

Example 1c: An apparatus comprising: a node; a capacitor comprisingnon-linear polar material, the first capacitor having a first terminalcoupled to the node and a second terminal coupled to a plate-line; atransistor coupled to the node and a bit-line, wherein the transistor iscontrollable by a word-line; and circuitry to apply the plate-line withdifferent voltages at different times to create partially polarizedstates in the non-linear polar material of the capacitor.

Example 2c: The apparatus of example 1c, wherein the capacitorcomprises: a first layer comprising a first conducting material, whereinthe first layer is coupled to the first terminal of the capacitor; asecond layer comprising a first conducting material, wherein the secondmaterial is around the first layer; a third layer comprising thenon-linear polar material, wherein the third layer is around the secondlayer; a fourth layer comprising a second conducting material, whereinthe fourth material is around the third layer; and a fifth layercomprising a second conducting material, wherein the plate-line ispartially coupled to the fifth layer.

Example 3c: The apparatus of example 2c, wherein the first layer has afirst circumference, wherein the second layer has a secondcircumference, wherein the third layer has a third circumference,wherein the fourth layer has a fourth circumference, and wherein thefifth layer has a fifth circumference, wherein the fourth circumferenceis larger than the third circumference, wherein the third circumferenceis larger than the second circumference, wherein the secondcircumference is larger than the first circumference.

Example 4c: The apparatus of example 1c comprising logic to refresh acharge on the capacitor during an active mode.

Example 5c: The apparatus of example 4c, wherein the logic is to refreshperiodically.

Example 6c: The apparatus of example 1c, wherein the plate-line and theword-line are parallel relative to one another.

Example 7c: The apparatus of example 1c, wherein the plate-line and thebit-line are parallel relative to one another.

Example 8c: The apparatus of example 1c, wherein the capacitor is aplanar capacitor.

Example 9c: The apparatus of example 1c, wherein the non-linear polarmaterial includes one of: ferroelectric material, para-electricmaterial, or non-linear dielectric.

Example 10c: The apparatus of example 1c, wherein the non-linear polarmaterial of the first capacitor is partially polarized to store multipledata values.

Example 11c: The apparatus of example 1c, wherein the transistor is oneof a planar transistor or a non-planar transistor.

Example 12c: The apparatus of example 11c, wherein the ferroelectricmaterial includes one of: Bismuth ferrite (BFO), BFO with a dopingmaterial where in the doping material is one of Lanthanum, or elementsfrom lanthanide series of periodic table; Lead zirconium titanate (PZT),or PZT with a doping material, wherein the doping material is one of La,Nb; relaxor ferroelectric which includes one of lead magnesium niobate(PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanumzirconate titanate (PLZT), lead scandium niobate (PSN), BariumTitanium-Bismuth Zinc Niobium Tantalum (BT-BZNT), or BariumTitanium-Barium Strontium Titanium (BT-BST); perovskite includes one of:BaTiO3, PbTiO3, KNbO3, or NaTaO3; hexagonal ferroelectric includes oneof: YMnO3, or LuFeO3; hexagonal ferroelectrics of a type h-RMnO3, whereR is a rare earth element which includes one of: cerium (Ce), dysprosium(Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho),lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr),promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium(Tm), ytterbium (Yb), or yttrium (Y); Hafnium (Hf), Zirconium (Zr),Aluminum (Al), Silicon (Si), their oxides or their alloyed oxides;Hafnium oxides as Hf1-x Ex Oy, where E can be Al, Ca, Ce, Dy, er, Gd,Ge, La, Sc, Si, Sr, Sn, or Y; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)Nor Al(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca,Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction;Niobate type compounds LiNbO3, LiTaO3, Lithium iron Tantalum OxyFluoride, Barium Strontium Niobate, Sodium Barium Niobate, or Potassiumstrontium niobate; or improper ferroelectric includes one of: [PTO/STO]nor [LAO/STO]n, where ‘n’ is between 1 to 100.

Example 13c: An apparatus comprising: a node; a capacitor comprisingnon-linear polar material, the first capacitor having a first terminalcoupled to the node and a second terminal coupled to a plate-line; atransistor coupled to the node and a bit-line, wherein the transistor iscontrollable by a word-line; and circuitry to apply the plate-line witha constant voltage via a time pulse having different widths to createpartially polarized states in the non-linear polar material of thecapacitor.

An abstract is provided that will allow the reader to ascertain thenature and gist of the technical disclosure. The abstract is submittedwith the understanding that it will not be used to limit the scope ormeaning of the claims. The following claims are hereby incorporated intothe detailed description, with each claim standing on its own as aseparate embodiment.

We claim:
 1. An apparatus comprising: a first metal layer extendingalong an x-plane; a second metal layer extending along the x-plane,wherein the second metal layer is above the first metal layer; a firstvia extending along a y-plane, wherein the y-plane is orthogonal to thex-plane, and wherein the first via couples the first metal layer withthe second metal layer; a second via extending along the y-plane,wherein the second via couples the second metal layer, and wherein thesecond via is above the first via; a first pedestal on the first metallayer, wherein the first pedestal is laterally offset from the firstvia; a second pedestal on the second metal layer, wherein the secondpedestal is laterally offset from the second via; a first plate-lineextending along a z-plane, wherein the z-plane is orthogonal to thex-plane and the y-plane; a second plate-line extending along thez-plane; a first planar stack of materials including a non-linear polarmaterial, wherein the first planar stack of materials has a topelectrode and a bottom electrode, wherein the non-linear polar materialis between the top electrode and the bottom electrode, wherein thebottom electrode is on the first pedestal, and wherein the firstplate-line is on the top electrode; and a second planar stack ofmaterials including a non-linear polar material, wherein the firstplanar stack of materials has a top electrode and a bottom electrode,wherein the non-linear polar material is between the top electrode ofthe second planar stack of materials and the bottom electrode and thesecond planar stack of materials, wherein the bottom electrode is on thesecond pedestal, and wherein the second plate-line on the top electrode.2. The apparatus of claim 1, wherein the first planar stack of materialsincludes: a first layer coupled to the bottom electrode, wherein thefirst layer comprises a first refractive inter-metallic material, andwherein the first layer extends along the x-plane; a second layer on thefirst layer, wherein the second layer comprises a first conductiveoxide, and wherein the second layer extends along the x-plane; a thirdlayer comprising the non-linear polar material, wherein the third layeris on the second layer, and wherein the third layer extends along thex-plane; a fourth layer on the third layer, wherein the fourth layercomprises a second conductive oxide, and wherein the fourth layerextends along the x-plane; and a fifth layer on the fourth layer,wherein the fifth layer comprises a second refractive inter-metallicmaterial, and wherein the first plate-line is coupled to a portion ofthe fifth layer.
 3. The apparatus of claim 2, wherein: the firstrefractive inter-metallic material and the second refractiveinter-metallic material include one or more of Ta, Ti, Al, W, Ni, Ga,Mn, Fe, B, C, N or Co; and the first conductive oxide and the secondconductive oxide include one or more of: Ir, In, Fe, Ru, Pd, Os, or Re.4. The apparatus of claim 2, wherein the first planar stack of materialsincludes: a sixth layer extending along the y-plane, wherein the sixthlayer is adjacent to side walls of the first layer, the second layer,the third layer, and the fourth layer, and wherein the sixth layerincludes one of: Ti—Al—O, Al2O3, or MgO.
 5. The apparatus of claim 1,wherein the first planar stack of materials includes: a first layercoupled to the bottom electrode, wherein the first layer comprises afirst conductive oxide, and wherein the first layer extends along thex-plane; a second layer comprising the non-linear polar material,wherein the second layer is on the second layer, and wherein the secondlayer extends along the x-plane; and a third layer on the second layer,wherein the third layer comprises a second conductive oxide, wherein thethird layer extends along the x-plane, and wherein the first plate-lineis coupled to a portion of the third layer.
 6. The apparatus of claim 5,wherein the first conductive oxide and the second conductive oxideinclude one or more of: Ir, In, Fe, Ru, Pd, Os, or Re.
 7. The apparatusof claim 5, wherein the first planar stack of materials includes afourth layer extending along the y-plane, wherein the fourth layer isadjacent to side walls of the first layer, the second layer, and thethird layer, and wherein the fourth layer includes one of: Ti—Al—O,Al2O3, or MgO.
 8. The apparatus of claim 1 comprising an etch stopmaterial over the first metal layer.
 9. The apparatus of claim 1,wherein the first via and the first planar stack of materials areseparated by a region comprising an interlayer dielectric.
 10. Theapparatus of claim 1, wherein the first planar stack of materials andthe second planar stack of materials are part of a single bit-cell. 11.The apparatus of claim 1, wherein the first plate-line extends along az-plane, wherein the z-plane is orthogonal to the x-plane and they-plane, and wherein the second plate-line extends along the z-plane,and wherein the second plate-line is on a different layer than the firstplate-line.
 12. The apparatus of claim 1, wherein the non-linear polarmaterial of the first planar stack of materials is partially polarizedto store multiple data values.
 13. The apparatus of claim 1, wherein thenon-linear polar material includes one of: ferroelectric material,paraelectric material, or non-linear dielectric.
 14. The apparatus ofclaim 13, wherein the ferroelectric material includes one of: Bismuthferrite (BFO) with a doping material, where in the doping material isone of Lanthanum, or elements from lanthanide series of periodic table;Lead zirconium titanate (PZT), or PZT with a doping material, whereinthe doping material is one of La or Nb; a relaxor ferroelectric whichincludes one of lead magnesium niobate (PMN), lead magnesiumniobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate(PLZT), lead scandium niobate (PSN), Barium Titanium-Bismuth ZincNiobium Tantalum (BT-BZNT), or Barium Titanium-Barium Strontium Titanium(BT-BST); a perovskite which includes one of: BaTiO3, PbTiO3, KNbO3, orNaTaO3; a hexagonal ferroelectric which includes one of: YMnO3, orLuFeO3; hexagonal ferroelectrics of a type h-RMnO3, where R is a rareearth element which includes one of: cerium (Ce), dysprosium (Dy),erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum(La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm),samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium(Yb), or yttrium (Y); Hafnium (Hf), Zirconium (Zr), Aluminum (Al),Silicon (Si), their oxides or their alloyed oxides; Hafnium oxides asHf1-x Ex Oy, where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr,Sn, Zr, or Y; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N orAl(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca, Ce,Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction;Niobate type compounds LiNbO3, LiTaO3, Lithium iron Tantalum OxyFluoride, Barium Strontium Niobate, Sodium Barium Niobate, or Potassiumstrontium niobate; or an improper ferroelectric which includes one of:[PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to
 100. 15. Theapparatus of claim 13, wherein the paraelectric material includes:SrTiO3, Ba(x)Sr(y)TiO3, HfZrO2, Hf—Si—O, La-substituted PbTiO3, orPMN-PT based relaxor ferroelectrics.
 16. A system comprising: a memoryto store one or more instructions; a processor circuitry to execute theone or more instructions; and a communication interface to allow theprocessor circuitry to communicate with another device, wherein thememory includes: a first metal layer extending along an x-plane; asecond metal layer extending along the x-plane, wherein the second metallayer is above the first metal layer; a first via extending along ay-plane, wherein the y-plane is orthogonal to the x-plane, and whereinthe first via couples the first metal layer with the second metal layer;a second via extending along the y-plane, wherein the second via couplesthe second metal layer, and wherein the second via is above the firstvia; a first pedestal on the first metal layer, wherein the firstpedestal is laterally offset from the first via; a second pedestal onthe second metal layer, wherein the second pedestal is laterally offsetfrom the second via; a first plate-line extending along a z-plane,wherein the z-plane is orthogonal to the x-plane and the y-plane; asecond plate-line extending along the z-plane; a first planar stack ofmaterials including a non-linear polar material, wherein the firstplanar stack of materials has a top electrode and a bottom electrode,wherein the non-linear polar material is between the top electrode andthe bottom electrode, wherein the bottom electrode is on the firstpedestal, and wherein the first plate-line is on the top electrode; anda second planar stack of materials including a non-linear polarmaterial, wherein the first planar stack of materials has a topelectrode and a bottom electrode, wherein the non-linear polar materialis between the top electrode of the second planar stack of materials andthe bottom electrode and the second planar stack of materials, whereinthe bottom electrode is on the second pedestal, and wherein the secondplate-line on the top electrode.
 17. The system of claim 16 comprisinglogic to periodically refresh the non-linear polar material of the firstplanar stack of materials during an active mode, wherein the non-linearpolar material of the first planar stack of materials is partiallypolarized to store multiple data values.